Influence of polishing technique on crack resistance of quartz plates

Lapitskaya, V. A.; Кузнецова, Т. А.; Khudoley, Andrei; Khabarava, Anastasiya; Чижик, С. А.; Aizikovich, S. M.; Sadyrin, Evgeniy V.

doi:10.1007/s10704-021-00564-5

Cited by 4 publications

(1 citation statement)

References 65 publications

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“…Firstly, the processing and polishing of the quartz material can be improved. Currently, airbag polishing, magnetorheological polishing, and other methods are used to polish the surface of fused silica optical elements to improve their damage threshold [10][11][12]. Secondly, surface and sub-surface defects of quartz materials can be treated after polishing.…”

Section: Introductionmentioning

confidence: 99%

Effect of Plasma Etching Depth on Subsurface Defects in Quartz Crystal Elements

Li,

Zhang,

Shi

et al. 2023

Crystals

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After the plasma etching of quartz crystal, the crystal lattice underwent changes in response to the length of plasma etching time. The lattice arrangement of quartz crystal was the most orderly after plasma etching for 1000 nm, and with the increase in etching time, the lattice arrangement became less orderly again. The weak absorption value of quartz crystal was also consistent with this conclusion. In this paper, we investigated the effect of lattice changes on the damage threshold of quartz crystals by characterizing the quartz crystals using Reactive Ion Etching (RIE). We also examined the effect of lattice variation on roughness and surface topography.

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Section: Introductionmentioning

confidence: 99%

Effect of Plasma Etching Depth on Subsurface Defects in Quartz Crystal Elements

Li,

Zhang,

Shi

et al. 2023

Crystals

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Methods for Accuracy Increasing of Solid Brittle Materials Fracture Toughness Determining

Lapitskaya

Кузнецова

Чижик

et al. 2022

Prib. metody izmer.

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Method for determining of the fracture toughness of brittle materials by indentation is described. The critical stress intensity factor KIC quantifies the fracture toughness. Methods were developed and applied to improve the accuracy of KIC determination due to atomic force microscopy and nanoindentation. It is necessary to accurately determine parameters and dimensions of the indentations and cracks formed around them in order to determine the KIC . Instead of classical optical and scanning electron microscopy an alternative high-resolution method of atomic force microscopy was proposed as an imaging method.Three methods of visualization were compared. Two types of crack opening were considered: along the width without vertical displacement of the material and along the height without opening along the width. Due to lack of contact with the surface of the samples under study, the methods of optical and scanning electron microscopy do not detect cracks with a height opening of less than 100 nm (for optical) and less than 40–50 nm (for scanning electron microscopy). Cracks with opening in width are determined within their resolution. Optical and scanning electron microscopy cannot provide accurate visualization of the deformation area and emerging cracks when applying small loads (less than 1.0 N). The use of atomic force microscopy leads to an increase in accuracy of determining of the length of the indent diagonal up to 9.0 % and of determining of the crack length up to 100 % compared to optical microscopy and up to 67 % compared to scanning electron microscopy. The method of atomic force microscopy due to spatial three-dimensional visualization and high accuracy (XY ± 0.2 nm, Z ± 0.03 nm) expands the possibilities of using indentation with low loads.A method was proposed for accuracy increasing of KIC determination by measuring of microhardness from a nanoindenter. It was established that nanoindentation leads to an increase in the accuracy of KIC determination by 16–23 % and eliminates the formation of microcracks in the indentation.

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Influence of Temperature from 20 to 100 °C on Specific Surface Energy and Fracture Toughness of Silicon Wafers

Lapitskaya,

Kuznetsova,

Chizhik

2023

Prib. metody izmer.

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The influence of temperature in the range from 20 to 100 °C on the specific surface energy and fracture toughness of standard silicon wafers of three orientations (100), (110) and (111) was studied. Silicon wafers were heated on a special thermal platform with an autonomous heating controller, which was installed under the samples. At each temperature, the samples were kept for 10 min. The specific surface energy γ after exposure to temperature was determined by atomic force microscopy (AFM). Fracture toughness during and after exposure to temperature was determined by indentation followed by visualization of the deformation region using AFM. It has been established that the specific surface energy γ of Si wafers with orientation (100) and (111) increases with increasing temperature from 20 to 100 °C, and for orientation (110) it increases at temperatures from 20 to 80 °C, and then decreases. The diagonal length d of indentation marks, performed both during the heating process and after heating, decreases by increasing the temperature from 20 to 100 °C. The crack length c decreases on silicon wafers during indentation during heating from 20 to 100 °C, and after exposure to temperature, the length increases. When the plates are exposed to temperature, the fracture toughness KIC increases with increasing temperature: for orientation (100) – up to 1.61 ± 0.08 MPa·m1/2, for (110) – up to 1.60 ± 0.08 MPa·m1/2 and for (111) – up to 1.66 ± 0.04 MPa·m1/2. A direct correlation was established between KIC, measured during exposure to temperature, and an inverse correlation between KIC measured after exposure to temperature and specific surface energy for the (100) and (111) orientations. An inverse correlation was obtained by KIC at the (110) orientation when exposed to temperatures of 20–40 and 80–100 °C, and after exposure, a direct correlation was obtained. At 60 °C there is no correlation. The results obtained can be used to improve the mechanical properties of silicon wafers used in solar cells and microelectromechanical systems (operating at temperatures up to 100 °C).

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Influence of polishing technique on crack resistance of quartz plates

Cited by 4 publications

References 65 publications

Effect of Plasma Etching Depth on Subsurface Defects in Quartz Crystal Elements

Effect of Plasma Etching Depth on Subsurface Defects in Quartz Crystal Elements

Methods for Accuracy Increasing of Solid Brittle Materials Fracture Toughness Determining

Influence of Temperature from 20 to 100 °C on Specific Surface Energy and Fracture Toughness of Silicon Wafers

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