Influence of post-synthesis annealing on PbS quantum dot solar cells

Wang, Haowei; Shen, Yang; Wang, Yishan; Xu, Junfeng; Huang, Yueli; Li, Weile; He, Bin; Sulaman, Muhammad; Jiang, Yurong; Tang, Yi; Zou, B. S.

doi:10.1016/j.orgel.2016.12.053

Cited by 27 publications

(6 citation statements)

References 43 publications

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“…This was chiefly due to increasing QD coupling, caused by a necking phenomenon, as confirmed by the broadening of the exciton band (Figure 2a). Similar annealing temperature dependency has been reported for PbS QD films prepared using a solid-phase ligand exchange method [29,30]. However, the temperature at which the absorption band began widening was lower in the liquid-phase ligand exchange films.…”

Section: Optical Properties Of the Pbs Ink Filmssupporting

confidence: 79%

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Annealing-Temperature Dependent Carrier-Transportation in ZnO/PbS Quantum Dot Solar Cells Fabricated Using Liquid-Phase Ligand Exchange Methods

et al. 2020

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We constructed ZnO/PbS quantum dot (QD) heterojunction solar cells using liquid-phase ligand exchange methods. Colloidal QD solutions deposited on ZnO-dense layers were treated at different temperatures to systematically study how thermal annealing temperature affected carrier transport properties. The surface of the layers became dense and smooth as the temperature approached approximately 80 °C. The morphology of layers became rough for higher temperatures, causing large grain-forming PbS QD aggregation. The number of defect states in the layers indicated a valley-shaped profile with a minimum of 80 °C. This temperature dependence was closely related to the amount of residual n-butylamine complexes in the PbS QD layers and the active layer morphology. The resulting carrier diffusion length obtained on the active layers treated at 80 °C reached approximately 430 nm. The solar cells with a 430-nm-thick active layer produced a power conversion efficiency (PCE) of 11.3%. An even higher PCE is expected in solar cells fabricated under optimal annealing conditions.

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Section: Optical Properties Of the Pbs Ink Filmssupporting

confidence: 79%

“…The energy level alignment of the QD layers using different ligand treatments was demonstrated as being useful for elongating carrier diffusion lengths, thereby increasing short circuit current density [27]. In addition, post-annealing CQD layers have been reported to help enhance PCE [28][29][30].…”

Section: Of 11mentioning

confidence: 99%

Annealing-Temperature Dependent Carrier-Transportation in ZnO/PbS Quantum Dot Solar Cells Fabricated Using Liquid-Phase Ligand Exchange Methods

et al. 2020

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“…There is a growing interest in semiconductor colloidal quantum dots (CQDs) due to their exceptional optoelectronic properties. , Consequently, more and more application-oriented research studies are being carried out in CQD-based light-emitting diodes (LEDs), lasers, , solar cells, − and photodetectors, − benefiting greatly from the optoelectronic properties of QDs that take advantage of the quantum confinement effect. Due to its ease of solution processing, large device area, low cost, mechanical flexibility, quantum confinement effect due to the large exciton Bohr radius of up to 18 nm, and multiple exciton generation (MEG), PbS QDs are widely used in these optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Interlayer of PMMA Doped with Au Nanoparticles for High-Performance Tandem Photodetectors: A Solution to Suppress Dark Current and Maintain High Photocurrent

Sulaman

Song

Yang

et al. 2020

ACS Appl. Mater. Interfaces

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Currently, colloidal quantum dots (CQDs)-based photodetectors are widely investigated due to their low cost and easy integration with optoelectronic devices. The requirements for a high-performance photodetector are a low dark current and a high photocurrent. Normally, photodetectors with a low dark current also possess a low photocurrent, or photodetectors with reduced dark current possess a reduced photocurrent, resulting in low detectivity. In this paper, a solution to suppress dark current and maintain a high photocurrent, i.e., use of poly(methyl methacrylate) doped with Au nanoparticles (NPs) (i.e., PMMA:Au) as an interlayer for enhanced-performance tandem photodetectors, is presented. Our experimental data showed that the dark current through the tandem photodetector ITO/PEDOT:PSS/PbS:CsSnBr3/ZnO/PMMA:Au/CuSeN/PbS:CsSnBr3/ZnO/Ag is suppressed significantly; meanwhile, a high photocurrent is maintained after a PMMA:Au interlayer has been inserted between two subdetectors. The inserted PMMA:Au interlayer acts as storage nodes for electrons, reducing the dark current through the device; meanwhile, the photocurrent can be enhanced under illumination. As a result, the specific detectivity of the tandem photodetector with 35 nm PMMA:Au interlayer was enhanced significantly from 5.01 × 1012 to 2.7 × 1015 Jones under 300 μW/cm2 532 nm illumination at a low voltage of −1 V as compared to the device without a PMMA:Au interlayer. Further, the physical mechanism of enhanced performance is discussed in detail.

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“…Also, the postheating assists in raising the conduction band minimum (CBM) to bend with the ZnO band. By restraining the temperature, the LQDs become closer, increasing the V oc and improving the charge transfer, [113] increasing the initial PCE by 38%. Alternatively, the remained organic ligands and defects on the PbS-QDs device are removed by applying oxygen plasma to the surface of PbS.…”

Section: Absorber Deposition and Post-treatmentmentioning

confidence: 99%

PbS Colloidal Quantum Dots Infrared Solar Cells: Defect Information and Passivation Strategies

Khalaf,

Li,

Yan

et al. 2023

Small Science

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Large‐sized lead sulfide quantum dots (PbS QDs) offer strong absorption in the infrared, making them suitable for bottom cells in tandem devices. However, current QD‐based tandem devices underperform compared to single junction devices. This review focuses on defect information and passivation strategies in large‐sized QD solar cells. Defects from oxidation, polydispersity, and nonbonding sites on the (001) facet during QD synthesis are examined. Ligand‐exchange‐related defects such as tangled atoms, incomplete passivation, and excess ligands are analyzed. Surface and interface defects resulting from solar cell fabrication are also discussed. Strategies including cation exchange, thermodynamic growth, kinetic growth, and mixed halide ligands are summarized. Post‐treatment approaches could also help to address surface and interface defects. Large‐sized PbS‐QDs show promise as infrared radiation absorbers. Overcoming defects and implementing effective passivation strategies are crucial for single junction and tandem solar cells.

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Influence of post-synthesis annealing on PbS quantum dot solar cells

Cited by 27 publications

References 43 publications

Annealing-Temperature Dependent Carrier-Transportation in ZnO/PbS Quantum Dot Solar Cells Fabricated Using Liquid-Phase Ligand Exchange Methods

Annealing-Temperature Dependent Carrier-Transportation in ZnO/PbS Quantum Dot Solar Cells Fabricated Using Liquid-Phase Ligand Exchange Methods

Interlayer of PMMA Doped with Au Nanoparticles for High-Performance Tandem Photodetectors: A Solution to Suppress Dark Current and Maintain High Photocurrent

PbS Colloidal Quantum Dots Infrared Solar Cells: Defect Information and Passivation Strategies

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