Influence of precursor concentration on the structural, optical and electrical properties of indium oxide thin film prepared by a sol–gel method

Lau, Lik Nguong; Ibrahim, Noor Baa`Yah; Baqiah, Hussein

doi:10.1016/j.apsusc.2015.03.129

Cited by 33 publications

(11 citation statements)

References 26 publications

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“…Indium oxide (In 2 O 3 ) is a promising n-type semiconductor material that has not only a wide band gap (∼3.75 eV), but also a high mobility (∼20 cm 2 V –1 s –1 ) and a good thermal stability. , In addition, its highly transparent property is also conducive to its optoelectronic applications . These satisfying optical, thermal, and electrical properties imply that In 2 O 3 should be a good potential ESL candidate in PSCs.…”

Section: Introductionmentioning

confidence: 99%

Perovskite Solar Cells Based on Low-Temperature Processed Indium Oxide Electron Selective Layers

Qin

et al. 2016

ACS Appl. Mater. Interfaces

137

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Indium oxide (In2O3) as a promising n-type semiconductor material has been widely employed in optoelectronic applications. In this work, we applied low-temperature solution-processed In2O3 nanocrystalline film as an electron selective layer (ESL) in perovskite solar cells (PSCs) for the first time. By taking advantages of good optical and electrical properties of In2O3 such as high mobility, wide band gap, and high transmittance, we obtained In2O3-based PSCs with a good efficiency exceeding 13% after optimizing the concentration of the precursor solution and the annealing temperature. Furthermore, to enhance the performance of the In2O3-based PSCs, a phenyl-C61-butyric acid methyl ester (PCBM) layer was introduced to modify the surface of the In2O3 film. The PCBM film could fill up the pinholes or cracks along In2O3 grain boundaries to passivate the defects and make the ESL extremely compact and uniform, which is conducive to suppressing the charge recombination. As a result, the efficiency of the In2O3-based PSC was improved to 14.83% accompanied with V(OC), J(SC), and FF being 1.08 V, 20.06 mA cm(-2), and 0.685, respectively.

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Section: Introductionmentioning

confidence: 99%

Perovskite Solar Cells Based on Low-Temperature Processed Indium Oxide Electron Selective Layers

Qin

et al. 2016

ACS Appl. Mater. Interfaces

137

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“…Electrical properties of the In 1.92 Fe 0.08 O 3 thin films were analysed by a Hall Effect Measurement System and the connections were done by the Van der Pauw method. The measurements were carried out in room temperature (29°C) and a dark atmosphere to prevent the photoconductive effect as it will affect the accuracy of measurements (Flores-Mendoza et al 2008;Lau et al 2015). Figure 9 shows that the resistivity of In 1.92 Fe 0.08 O 3 thin films decreases and the carrier concentration increases with increasing hydrogen flow rates.…”

Section: Resultsmentioning

confidence: 99%

Influence of Hydrogen Flow Rates Annealing on the Structural, Optical, and Electrical Properties of Sol-Gel Synthesized Fe doped In2O3 Films

Ibrahim¹,

Zulkifli

Lau

et al. 2019

JSM

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Diluted magnetic semiconductors (DMSs) have always been of great interest to study due to their wide applications in spintronics. This research was carried out to study the influence of different hydrogen gas flow rates annealing on the physical properties of Fe doped indium oxide. In 1.92 Fe 0.08 O 3 thin films were prepared by a sol-gel method and followed by a spin coating technique. Different flow rates of hydrogen gas were applied during the annealing process. All samples showed high orientation along the (222) direction and exhibit a polycrystalline structure. Grain size increased as the flow rate increased due to the stronger reduction of H 2 . FTIR studies showed the existence of an O-H bond in the range of 3000 -4000 cm -1 and it was caused by the flow of H 2 gas during the annealing process. The resistivity of In 1.92 Fe 0.08 O 3 thin films decreased and the carrier concentration increased with increasing hydrogen flow rates. This work has significance on the size-dependent properties and the chemical bonding in Fe doped In 2 O 3 films. Keywords: FTIR; H 2 gas flow rate; iron doped indium oxide; thin film ABSTRAK Semikonduktor magnetik cair (DMSs) sentiasa menjadi tarikan utama untuk dikaji disebabkan penggunaannya yang meluas dalam spintronik. Kajian ini dijalankan untuk mengkaji kesan perbezaan aliran gas hidrogen sepuh lindap pada sifat fizikal filem Fe terdop indium oksida. Filem In 1.92 Fe 0.08 O 3 telah disediakan melalui kaedah sol-gel diikuti dengan teknik salutan putaran. Kadar aliran gas hidrogen yang berlainan digunakan semasa proses penyepuh lindapan. Kesemua sampel menunjukkan orientasi tinggi pada arah (222) dan berstruktur polihablur. Saiz butiran bertambah apabila kadar aliran bertambah disebabkan pengurangan H 2 . Kajian FTIR menunjukkan kewujudan ikatan O-H dalam julat 3000 -4000 cm -1 dan ia disebabkan oleh aliran gas H 2 semasa proses penyepuh lindapan. Kerintangan filem nipis In 1.92 Fe 0.08 O 3 menurun dan kepekatan pembawa meningkat dengan peningkatan kadar aliran . Kajian ini mempunyai keberertian pada sifat kebergantungan kepada saiz dan ikatan kimia dalam filem Fe terdop In 2 O 3 . Kata kunci: Fe terdop indium oksida; filem nipis; FTIR; kadar aliran gas H 2

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“…[ 16 ] To improve the quality of the SnO 2 /perovskite interface, researchers have explored many interfacial materials, such as inorganic salts (KCl, [ 17 ] KOH, [ 18 ] NH 4 Cl, [ 19,20 ] and NH 4 F [ 21 ] ), organic small molecules (ethylenediaminetetraacetic acid [EDTA], [ 22 ] triphenylphosphine oxide [TPPO] [ 23 ] ), and polymers (polyethylene glycol [PEG], [ 24 ] poly(ethylene glycol) diacrylate ([PEGDA] [ 25 ] ). Particularly, previous literature report that In 2 O 3 can be utilized as ETL, [ 26–30 ] interlayer between transparent conducting oxide and ETL [ 26,31,32 ] or interlayer between ETL and perovskite layer [ 33–35 ] due to the high electron mobility (~25 cm 2 V −1 s −1 ), [ 36 ] high light transmission properties, [ 37 ] and low‐temperature processing (~200°C). [ 31 ] These interfacial materials facilitate the electron transfer at the SnO 2 /perovskite interface by aligning the conduction band maximum and passivating the interfacial defects.…”

Section: Introductionmentioning

confidence: 99%

Monolithic bilayered In₂O₃ as an efficient interfacial material for high‐performance perovskite solar cells

Tian

Song

Zhao

et al. 2022

Interdisciplinary Materials

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Carrier recombination at the buried SnO 2 /perovskite interface limits the efficiency and stability of n-i-p-structured perovskite solar cells (PSCs). Herein, we report an In 2 O 3 interfacial layer with the distinctive structure of the monolithic compact/nanostructured bilayer. The partial hydrolysis nature of the In 3+ ion enables the formation of nanorods on top of the compact In 2 O 3 layer when spin-coating the In(NO 3 ) 3 aqueous solution. This novel interfacial layer reduces the pinholes of the SnO 2 film and increases the contact area between the perovskite and electron transport material.

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Influence of precursor concentration on the structural, optical and electrical properties of indium oxide thin film prepared by a sol–gel method

Cited by 33 publications

References 26 publications

Perovskite Solar Cells Based on Low-Temperature Processed Indium Oxide Electron Selective Layers

Perovskite Solar Cells Based on Low-Temperature Processed Indium Oxide Electron Selective Layers

Influence of Hydrogen Flow Rates Annealing on the Structural, Optical, and Electrical Properties of Sol-Gel Synthesized Fe doped In2O3 Films

Monolithic bilayered In₂O₃ as an efficient interfacial material for high‐performance perovskite solar cells

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Influence of precursor concentration on the structural, optical and electrical properties of indium oxide thin film prepared by a sol–gel method

Cited by 33 publications

References 26 publications

Perovskite Solar Cells Based on Low-Temperature Processed Indium Oxide Electron Selective Layers

Perovskite Solar Cells Based on Low-Temperature Processed Indium Oxide Electron Selective Layers

Influence of Hydrogen Flow Rates Annealing on the Structural, Optical, and Electrical Properties of Sol-Gel Synthesized Fe doped In2O3 Films

Monolithic bilayered In2O3 as an efficient interfacial material for high‐performance perovskite solar cells

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Monolithic bilayered In₂O₃ as an efficient interfacial material for high‐performance perovskite solar cells