Influence of precursor thin-film quality on the structural properties of large-area MoS2 films grown by sulfurization of MoO3 on c-sapphire

Španková, M.; Sojková, M.; Dobročka, Edmund; Hutár, Peter; Bodík, Michal; Munnik, F.; Hulman, Martin; Chromík, Š.

doi:10.1016/j.apsusc.2020.148240

Cited by 8 publications

(1 citation statement)

References 27 publications

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“…In the past few years, MoS 2 in transition metal dichalcogenides (TMDs) has been widely used for research in the fields of optoelectronics, chemical sensing, and energy conversion/storage devices. − MoS 2 has a tunable band gap due to the variation in atomic thickness, which provides a unique platform for interface electronic engineering . The preparation of continuous, high-crystalline quality MoS 2 films by different methods such as chemical vapor deposition (CVD), mechanical exfoliation, etc. has been extensively studied, and recently, attention has shifted to the support for growing MoS 2 with different properties (growth characteristics, thermal stability, photoelectric conversion, ultrafast nonlinear optics, etc.).…”

Section: Introductionmentioning

confidence: 99%

Charge Mobility and Strain Engineering in Two-Step MS-Grown MoS₂/Seed Layer Heterointerface and Photo-Excitation Mechanism

Wang

Yao

Wang

et al. 2023

ACS Appl. Mater. Interfaces

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Two-dimensional (2D) materials have potential application and wide development prospects in photoelectron and spintronic devices. However, the properties of different growth conditions are challenging to study in the future. This, in turn, hinders further research into 2D materials and the manufacture of high-quality devices. A comprehensive understanding of the ultrafast laser spectroscopy and dynamics that take into account the substrate-transition metal dichalcogenide (TMD) interaction is lacking. Here, the strain effect is elucidated by systematically investigating the interfacial interaction between different substrates and MoS2. The strain and interface engineering of MoS2/seeds layer heterointerface and light-matter coupling are discussed in the Raman and photoluminescence spectra. The dramatic enhanced PL originates from the phase transition of MoS2 on different substrates and electron–hole pairs dissociated by exciton screening effect. Finite-difference time-domain simulation confirmed that the electric field, magnetic field, and polarization field of the heterojunction system changed after the strain was applied. In addition, based on the dependence of physical parameters of MoS2, the relative numerical changes of physical parameters of MoS2 films on different substrates as well as the photoelectric transfer, strain, and charge doping levels on the surface or interface will provide a direction for optimizing the selection of various devices.

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Section: Introductionmentioning

confidence: 99%

Charge Mobility and Strain Engineering in Two-Step MS-Grown MoS₂/Seed Layer Heterointerface and Photo-Excitation Mechanism

Wang

Yao

Wang

et al. 2023

ACS Appl. Mater. Interfaces

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Gold‐Assisted Exfoliation of Large‐Area Monolayer Transition Metal Dichalcogenides: From Interface Properties to Device Applications

Panasci,

Schilirò,

Roccaforte

et al. 2024

Adv Funct Materials

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Semiconductor transition metal dichalcogenides (TMDs), such as MoS2, are currently regarded as key‐enabling materials for sub‐1 nm channel transistors, beyond‐complementary metal–oxide–semiconductor electronic and optoelectronic devices and sensors. Owing to this wide application potential, several bottom‐up and top‐down synthesis approaches for these materials have been explored so far. Despite the huge progresses in scalable deposition methods (such as chemical vapor deposition, metal–organic chemical vapor deposition), exfoliated layers from bulk crystals still represent the benchmark for record electronic properties of TMDs. Among exfoliation approaches, metal‐assisted mechanical exfoliation emerges as the most effective method to separate large‐area (mm2 to cm2) single‐crystalline monolayer membranes of TMDs (and many other 2D materials) from the parent bulk crystals. This paper reviews the state‐of‐the‐art in this field, from current understanding of MoS2 exfoliation mechanisms on Au (considered as a model system), to the main device applications of as‐exfoliated and transferred large‐area MoS2 membranes (including Au/MoS2/Au memristors, MoS2 photodetectors, and field‐effect transistors). Perspectives of this method in the realization of arrays of 2D heterojunction devices, including Moirè superlattice devices, and open challenges for its widespread application are finally discussed.

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Texture of YBCO layer grown on GaN/c-sapphire substrates

Dobročka

Španková

Sojková

et al. 2021

Applied Surface Science

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Influence of precursor thin-film quality on the structural properties of large-area MoS2 films grown by sulfurization of MoO3 on c-sapphire

Cited by 8 publications

References 27 publications

Charge Mobility and Strain Engineering in Two-Step MS-Grown MoS₂/Seed Layer Heterointerface and Photo-Excitation Mechanism

Charge Mobility and Strain Engineering in Two-Step MS-Grown MoS₂/Seed Layer Heterointerface and Photo-Excitation Mechanism

Gold‐Assisted Exfoliation of Large‐Area Monolayer Transition Metal Dichalcogenides: From Interface Properties to Device Applications

Texture of YBCO layer grown on GaN/c-sapphire substrates

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Influence of precursor thin-film quality on the structural properties of large-area MoS2 films grown by sulfurization of MoO3 on c-sapphire

Cited by 8 publications

References 27 publications

Charge Mobility and Strain Engineering in Two-Step MS-Grown MoS2/Seed Layer Heterointerface and Photo-Excitation Mechanism

Charge Mobility and Strain Engineering in Two-Step MS-Grown MoS2/Seed Layer Heterointerface and Photo-Excitation Mechanism

Gold‐Assisted Exfoliation of Large‐Area Monolayer Transition Metal Dichalcogenides: From Interface Properties to Device Applications

Texture of YBCO layer grown on GaN/c-sapphire substrates

Contact Info

Product

Resources

About

Charge Mobility and Strain Engineering in Two-Step MS-Grown MoS₂/Seed Layer Heterointerface and Photo-Excitation Mechanism

Charge Mobility and Strain Engineering in Two-Step MS-Grown MoS₂/Seed Layer Heterointerface and Photo-Excitation Mechanism