Influence of pressure and annealing on the microstructural and electro-optical properties of RF magnetron sputtered ITO thin films

Cruz, L. R.; Legnani, Cristiano; Matoso, I.G; Ferreira, C. L.; Moutinho, H. R.

doi:10.1016/j.materresbull.2004.03.008

Cited by 64 publications

(28 citation statements)

References 10 publications

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“…The few exceptions include Sychkova et al [24], who reported both optical and electrical properties of 9-80 nm ITO films deposited by pulsed DC sputtering varied with thickness and showed a general increase in resistivity with decrease in film thickness [24]. Other notable studies on ultra-thin ITO films using various deposition techniques include the following: Chen et al who used filtered cathodic vacuum arc (FCVA) to deposit 30-50 nm on heated quartz and Si substrates [25]; Tseng and Lo, who used DC magnetron sputter for 34.71-71.64 nm ITO film on PET (polyethylene terephthalate) [26]; Kim et al who used RF magnetron sputter for films between 40 and 280 nm deposited on PMMA substrate heated at 70°C [27]; Alam and Cameron, who used sol-gel process for 50-250 nm film deposited on titanium dioxide film [20]; and Betz et al who used planar DC magnetron sputtering for 50, 100 and 300 nm films on glass substrates [28]. The results from these few thin TCO studies reveal a pattern in which resistivity increases rapidly as film thickness decreases from 50 to 10 nm.…”

Section: Introductionmentioning

confidence: 99%

Limitations of ultra-thin transparent conducting oxides for integration into plasmonic-enhanced thin-film solar photovoltaic devices

Gwamuri

Vora

Khanal

et al. 2015

Mater Renew Sustain Energy

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This study investigates ultra-thin transparent conducting oxides (TCO) of indium tin oxide (ITO), aluminum-doped zinc oxide (AZO) and zinc oxide (ZnO) to determine their viability as candidate materials for use in plasmonic-enhanced thin-film amorphous silicon solar photovoltaic (PV) devices. First a sensitivity analysis of the optical absorption for the intrinsic layer of a nano-disk patterned thin-film amorphous silicon-based solar cell as a function of TCO thickness (10-50 nm) was performed by simulation. These simulation results were then used to guide the design of the experimental work which investigated both optical and electrical properties of ultra-thin (10 nm on average) films simultaneously deposited on both glass and silicon substrates using conventional rf sputtering. The effects of deposition and post-processing parameters on material properties of ITO, AZO and ZnO ultrathin TCOs were probed and the suitability of TCOs for integration into plasmonic-enhanced thin-film solar PV devices was assessed. The results show that ultra-thin TCOs present a number of challenges for use as thin top contacts on plasmonic-enhanced PV devices: (1) optical and electrical parameters differ greatly from those of thicker (bulk) films deposited under the same conditions, (2) the films are delicate due to their thickness, requiring very long annealing times to prevent cracking, and (3) reactive gases require careful monitoring to maintain stoichiometry. The results presented here found a trade-off between conductivity and transparency of the deposited films. Although the sub 50 nm TCO films investigated exhibited desirable optical properties (transmittance greater than 80 %), their resistivity was too high to be considered as materials for the top contact of conventional PV devices. Future work is necessary to improve thin TCO properties, or alternative materials, and geometries are needed in plasmonic-based amorphous silicon solar cells. The stability of ultra-thin TCO films also needs to be experimentally investigated under normal device operating conditions.

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Section: Introductionmentioning

confidence: 99%

Limitations of ultra-thin transparent conducting oxides for integration into plasmonic-enhanced thin-film solar photovoltaic devices

Gwamuri

Vora

Khanal

et al. 2015

Mater Renew Sustain Energy

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“…Como eletrodos de trabalho, foram utilizados substratos de vidro sodalime, de 1x1 pol 2 , cobertos com dois tipos de filmes condutores: óxido de índio-estanho (ITO), depositados por pulverização catódica [18], e óxido de estanho dopado com flúor (SnO 2 :F), adquiridos da empresa Flexitec. Ambos os substratos possuíam resistência de folha na faixa de 10-20 Ω/ .…”

Section: A Célula Eletroquímica E Eletrodosunclassified

Propriedades óticas e microestruturais de filmes finos eletrodepositados de CdTe

Cruz

Miguel

2012

Matéria (Rio J.)

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RESUMOFilmes finos de CdTe foram obtidos por eletrodeposição catódica, a partir de uma solução de CdSO 4 , H 2 SO 4 e Te. Os filmes foram depositados à temperatura ambiente, sobre substratos de vidro cobertos com SnO 2 ou In 2 O 3 :Sn. A influência do potencial de deposição nas propriedades microestruturais e óticas dos filmes foi investigada. Os valores de banda proibida dos filmes ficaram na faixa de 1,40 e 1,50 eV, próximos ao valor da banda do CdTe volumétrico. Um potencial de deposição ótimo foi determinado para cada substrato. O aquecimento do eletrólito a 50 o C não foi suficiente para provocar grandes alterações na cristalinidade, mas promoveu a formação de filmes com menor quantidade de defeitos. Isto sugere que um tratamento térmico pós-deposição possa melhorar as propriedades destes filmes para aplicações fotovoltaicas. Palavras-chave: Microestrutura, Filmes finos de CdTe, eletrodeposição ABSTRACTCdTe thin films were obtained by cathodic electrodeposition from a solution of CdSO 4 , H 2 SO 4 , and Te. The films were deposited at room temperature onto glass substrates covered with SnO 2 or In 2 O 3 :Sn. The dependence of the microstructural and optical properties of the films on deposition potential was investigated. The bandgap values ranged from 1.4 to 1.5 eV, as in bulk CdTe. An optimum value for the deposition potential was determined for each substrate. Heating the electrolyte to 50 o C did not change the film crystallinity, although it decreased the defect concentration. This suggests that a post-deposition heat treatment may lead to a better performance of the films in photovoltaic devices.

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“…Generally, a transparent electromagnetic wave shielding material is required to have the shielding capacity above 20db, and the optical transmissivity above 60% within the visible spectrum (380~780 nm). [7][8][9] ITO exhibits an optical transmissivity above 80% and excellent electrical conductivity. Consequently, research activities related to the manufacture of ITO film and its property enhancement are being conducted actively.…”

Section: Introductionmentioning

confidence: 99%

“…Consequently, research activities related to the manufacture of ITO film and its property enhancement are being conducted actively. [7][8][9] However, there hasn't been too much research effort regarding the mass production of indium oxide powder 10) and tin oxide powder with average particle size below 50 nm and uniform particle size distribution. In particular, there has been hardly any research activity related to the manufacture of nano-size tin oxide powder due to the engineering difficulties.…”

Section: Introductionmentioning

confidence: 99%

Preparation of Nano-Sized Tin Oxide Powder from Tin Chloride Solution by Spray Pyrolysis Process

Yu¹,

Kim²

2011

Korean. J. Mater. Res.

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In this study, by using tin chloride solution as a raw material, a nano-sized tin oxide powder with an average particle size below 50 nm is generated by a spray pyrolysis process. The properties of the generated tin oxide powder depending on the inflow speed of the raw material solution are examined. When the inflow speed of the raw material solution is 2 ml/min, the majority of generated particles appear in the shape of independent polygons with average size above 80-100 nm, while droplet-shaped particles show an average size of approximately 30 nm. When the inflow speed is increased to 5 ml/min, the ratio of independent particles decreases, and the average particle size is approximately 80-100 nm. When the inflow speed is increased to 20 ml/min, the ratio of droplet-shaped particles increases, whereas the ratio of independent particles with average size of 80-100 nm decreases. When the inflow speed is increased to 100 ml/min, the average size of the generated particles is around 30-40 nm, and most of them maintain a droplet shape. With a rise of inflow speed from 2 ml/min to 5 ml/min, a slight increase of the XRD peak intensity and a minor decrease of specific surface area are observed. When the inflow speed is increased to 20 ml/min, the XRD peak intensity falls dramatically, although a significant rise of specific surface area is observed. When the inflow speed is increased to 100 ml/min, the XRD peak intensity further decreases, while the specific surface area increases.Key words tin chloride solution, spray pyrolysis process, nano-sized tin oxide powder, average particle size, inflow speed of raw material solution.

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Influence of pressure and annealing on the microstructural and electro-optical properties of RF magnetron sputtered ITO thin films

Cited by 64 publications

References 10 publications

Limitations of ultra-thin transparent conducting oxides for integration into plasmonic-enhanced thin-film solar photovoltaic devices

Limitations of ultra-thin transparent conducting oxides for integration into plasmonic-enhanced thin-film solar photovoltaic devices

Propriedades óticas e microestruturais de filmes finos eletrodepositados de CdTe

Preparation of Nano-Sized Tin Oxide Powder from Tin Chloride Solution by Spray Pyrolysis Process

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