Influence of pressure on AlN thick films prepared by epitaxial lateral overgrowth through hydride vapor phase epitaxy

Abstract

Smooth and crack-free (0002) AlN thick films (∼30 μm) were epitaxially grown on trench-patterned AlN/sapphire templates through epitaxial lateral overgrowth (ELO) using hydride vapor phase epitaxy.

2-inch semi-polar (112̄2) AlN templates prepared by high-temperature hydride vapor phase epitaxy

“…31 Furthermore, the stress-free E 2 (high) vibrational mode of bulk AlN is 657.4 cm −1 . 32 The residual in-plane compressive stress ( σ ) for AlN could be computed using the classical formula provided below: 33 where ω E 2 (high) and ω 0 represent the values of the E 2 (high) peak for the as-grown AlN and stress-free AlN, respectively. The biaxial strain coefficient k is taken as 2.55 cm −1 GPa −1 .…”