Influence of processing conditions on the optical properties of chemically deposited zinc sulphide (ZnS) thin film

Igweoko, Anthony Egwu; Augustine, C; Idenyi, N. E.; Okorie, B. A.; Anyaegbunam, F. N. C.

doi:10.1088/2053-1591/aab652

Cited by 14 publications

(6 citation statements)

References 17 publications

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“…where, h is Planck's constant, v is the light frequency, Eg the bandgap, M is a constant related to the transition matrix between valence and conduction bands, and n = ½ to consider direct transitions. The bandgap value for ZnS film obtained from the film is 3.75 eV in agreement with reported values [42,43]. ZnS film present n-type conductivity as the negative value of Hall constant indicate, 8.36×10 4 Ω·cm is the resistivity value measured.…”

Section: Optical and Electrical Propertiessupporting

confidence: 89%

The role of Zn-complexing agents in the chemical bath deposition of ZnO and ZnS thin films

Rueda

Alonso

Meléndez‐Lira

2022

Superficies y Vacio

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In order to control the deposition of Zn-related films by chemical bath deposition, the effects of Zn-complexing agent are analyzed. ZnS films were produced by chemical bath deposition technique employing sodium citrate, ethanolamine and Triethanolamine as complexing agents. The deposition conditions for ZnS (ZnO) thin films were obtained through a thermodynamic analysis, using distribution diagrams for molar fraction of Zn complexes. From species distribution diagrams of Zn-ethanolamine, Zn-Triethanolamine and Zn-citrate. It was found that for pH values between 4 and 6 the highest Zn fraction is obtained. The results highlight the importance of complexing agent morphology, while the use of ethanolamine and triethanolamine produce ZnO films due to their high reactivity; the use of sodium citrate produce ZnS films. Deposited ZnS films have a cubic structure, n-type conductivity, resistivity of 8.36×104 ??cm with a 3.75 eV bandgap.

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Section: Optical and Electrical Propertiessupporting

confidence: 89%

The role of Zn-complexing agents in the chemical bath deposition of ZnO and ZnS thin films

Rueda

Alonso

Meléndez‐Lira

2022

Superficies y Vacio

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“…schemes as well, and they can dramatically extend the applications of optoelectronics devices [1][2][3][4]. ZnSe and ZnS materials can be considered as perspective semiconductors to form the different detectors for the wide spectral range and to develop the mirrors and the optical limiting instruments [5][6][7][8][9][10][11][12][13][14][15][16][17]. Researchers have revealed the anti-reflective, luminescent properties of these materials and visualized the process of the nanoparticles' creation based on the ZnSe and ZnS structures and their introduction into the polymer matrices [8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Carbon Nanotubes Use for the Semiconductors ZnSe and ZnS Material Surface Modification via the Laser-Oriented Deposition Technique

Каманина

Toikka

Valeev

et al. 2021

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It is known that a material’s volume and the surface structuring by the nanoparticles causes a significant change in the material’s basic properties. In this aspect, the structuration of the surface of semiconductors is of interest, because their wide potential application in optoelectronics can extend the products’ transparency, hardness, wettability, and other important parameters. This paper presents possible methods for the surface modification of zinc selenide and zinc sulfide when carbon nanotubes are deposited on the surface by the application of the laser-oriented technique. It also shows changes of the spectral, mechanical, and wetting characteristics of the considered materials. Using the molecular dynamic simulations, the possible process of the carbon nanotubes penetration into the considered surfaces is presented. The simulation results are partially supported by the obtained experimental data.

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“…A decrease in Urbach energy with an increase in thickness and an increase in energy band gap with an increase in thickness was observed for the four different paper samples tested at room temperature. The Urbach energy varied inversely to the band gap for all four paper samples [31]. The compositional decrease in Urbach energy can be explained by decreasing of the disorder in the paper samples.…”

Section: Discussionmentioning

confidence: 84%

The Determination of Optical Properties of Papers and a Paper Board

Chryssou¹

2022

ACSR

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Reflection graphs of four paper samples were recorded at room temperature in the wavelength range 400-700nm. From the UV-Vis data and using the Kubelka-Munk equation we calculated the indirect band gap energies of four different paper samples. The indirect band gap for tissue paper was estimated to be 1.169844796675eV, that of copy paper A4 axion sample of 1.169844772981780eV, of velvet board of 1.169844786551eV, and finally of Α4 copy paper maestro of 1.1698447698146900eV. The indirect band gap value was higher for tissue paper and proceeded decreasing from velvet board to copy paper A4 axion, and finally copy paper A4 maestro. The band gap energy was determined using the Tauc method. The Urbach energy for tissue paper was calculated to be 199.23meV. The Urbach energy for axion Α4 copy paper was calculated to be 324.23meV. The Urbach energy for velvet board was calculated to be 71.12meV. And finally, the Urbach energy for Α4 copy paper maestro was calculated to be 341.17meV. The Urbach energy varied inversely to the band gap for all four paper samples.

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Influence of processing conditions on the optical properties of chemically deposited zinc sulphide (ZnS) thin film

Cited by 14 publications

References 17 publications

The role of Zn-complexing agents in the chemical bath deposition of ZnO and ZnS thin films

The role of Zn-complexing agents in the chemical bath deposition of ZnO and ZnS thin films

Carbon Nanotubes Use for the Semiconductors ZnSe and ZnS Material Surface Modification via the Laser-Oriented Deposition Technique

The Determination of Optical Properties of Papers and a Paper Board

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