Influence of Proton Irradiation Energy on Gate–Channel Low-Field Electron Mobility in AlGaN/GaN HEMTs

Abstract

AlGaN/GaN high-electron-mobility transistors (HEMTs) with two different gate–drain distances (30 μm and 10 μm) were exposed to 1 MeV, 0.6 MeV, and 0.4 MeV protons at a fluence of 2.16 × 1012 cm−2. The gate–channel electron density and low-field mobility were obtained by measuring the capacitance–voltage characteristics and current–voltage characteristics. After proton irradiation, the gate–channel low-field electron mobility of the AlGaN/GaN HEMT with a 30 μm gate–drain distance increases and that with a 10 μm gate–drain distance decreases. It is studied and found that the mobility behavior is related to the polarization Coulomb field scattering, and the proton irradiation influences the intensity of the polarization Coulomb field scattering by changing the polarization/strain distribution in the barrier layer. The different gate–drain distances correspond to different variation trends of scattering intensity. The effect of 1 MeV protons on the barrier layer is smaller compared with 0.6 MeV and 0.4 MeV protons, so the mobility variation is smaller.

Study of High-Energy Proton Irradiation Effects in Top-Gate Graphene Field-Effect Transistors

“…The fact that graphene material is only a single-atomic-layer thick and lacks a bulk crystal structure gives graphene good resistance to radiation [9], making it promising for applications in the space field. Based on studies of the effects of proton irradiation on other aerospace devices [10][11][12], the total ionizing dose (TID) and displacement damage effects significantly impact the electrical performance of aerospace devices. Studying the total ionizing dose (TID) and displacement damage effects caused by proton irradiation on graphene fieldeffect transistors is essential.…”