2015
DOI: 10.1016/j.susc.2014.10.006
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Influence of quantum well states on the formation of Au–Pb alloy in ultra-thin Pb films

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Cited by 5 publications
(11 citation statements)
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“…The topography image and the typical spectrum of the differential tunneling conductance are presented in Figure (panels a and b). The pronounced oscillations of U aux as a function of U 0 point to the coherent resonant tunneling through the quantum-well states in a thin metallic film (see schematics in Figures a and a). The quantum-size oscillations of the tunneling conductance can be easily detected in Pb(111) films up to 50 monolayers at liquid nitrogen temperatures and up to 100 monolayers at sub-Kelvin temperatures .…”
Section: Resultsmentioning
confidence: 95%
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“…The topography image and the typical spectrum of the differential tunneling conductance are presented in Figure (panels a and b). The pronounced oscillations of U aux as a function of U 0 point to the coherent resonant tunneling through the quantum-well states in a thin metallic film (see schematics in Figures a and a). The quantum-size oscillations of the tunneling conductance can be easily detected in Pb(111) films up to 50 monolayers at liquid nitrogen temperatures and up to 100 monolayers at sub-Kelvin temperatures .…”
Section: Resultsmentioning
confidence: 95%
“…Nevertheless, the interference of the electronic wave emanating from the STM tip and the secondary waves scattered by point-like or extended defects under a metal surface give rise to a standing-wave pattern in the lateral plane. 25,26 The particular sensitivity of the interference patterns to the variations of the film thickness and the crystalline structure of the interfaces explains why the methods of the tunneling interferometry can be used for the visualization of monatomic steps at the upper/lower interfaces, 6,7,11,12 the atomic lattice of the substrate covered by metal, 7 inclusions, 12 and terraces with non-quantized height variations. 13 This paper is devoted to the experimental investigations of the spatial inhomogeneity of the differential tunneling conductance near screw and edge dislocations in thin Pb films by means of low-temperature STM/STS.…”
Section: ■ Introductionmentioning
confidence: 99%
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