Influence of radiation defects on electrical losses in silicon diodes irradiated with electrons

Poklonski, N. A.; Горбачук, Н. И.; Shpakovski, S. V.; Ластовский, С. Б.; Wieck, A. D.

doi:10.1134/s1063782610030188

Cited by 4 publications

(4 citation statements)

References 20 publications

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“…1) when the space charge region captures the irradiation damaged region. This agrees also with the results [10,12] and can be considered as an additional support for the stated assumption.…”

Section: Resultssupporting

confidence: 80%

Influence of Defects Introduced by Irradiation with 4-9 MeV Helium Ions on Impedance of Silicon Diodes

et al. 2015

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Section: Resultssupporting

confidence: 80%

Influence of Defects Introduced by Irradiation with 4-9 MeV Helium Ions on Impedance of Silicon Diodes

et al. 2015

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“…The CPE element introduced in the equivalent circuit №3 takes into account the additional frequency dispersion, which may be due to the recharge of depth centers in the space charge region (Sze, 2008;Barsoukov, Macdonald, 2005;Poklonski et al, 2010).…”

Section: Resultsmentioning

confidence: 99%

“…The higher the voltage is, the higher the transmission loss is, but the maximum is actually different among three regions. For p + -n diodes, which are irradiated by electrons (Poklonski et al, 2010), the presence of the maximum loss at frequencies in the order of tens of kHz is determined by the charging loss of the radiation defect in the space charge region. With an decrease in the bias voltage, the tgδ increases, thereby leading the presence of the maximum.…”

Section: Methodsmentioning

confidence: 99%

Equivalent Circuit of Al/SiO2/n-Si Structures Irradiated by Helium Ions with Energy 5 MeV at Fluence 1012 cm-2

2020

European Journal of Technology and Design

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Recently, metal-oxide-semiconductor structures using silicon dioxide is the most common microelectronic structures. Silicon dioxide (SiO2) is used to isolate pole gate dielectric, and it is also the main material used to make stable, high-performance devices of integrated circuits. Electrical parameters at the Si-SiO2 interface created by gamma irradiation depends on the type and penetration of the implanted ions. The paper provides a method of determining the equivalent circuit of a metal-oxide-semiconductor structure to determine its electrical parameters. The structure Al/SiO2/n-Si irradiated by helium ions with energy 5 MeV at fluence 10 12 cm -2 are studied to find its equivalent circuit. Result, the structure's equivalent circuit composing of a resistor and parallel RC circuit in series does not describe the frequency dependence of the electric loss in an alternating current at the frequency range 20 -3•10 6 Hz. In the inversion region with voltage U = -40 V, equivalent circuits are developed and implemented in a wide frequency range. These circuits allow us to easily calculate electrical parameters through the frequency dependence of impedance characteristics.

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“…1d with fluence 10 13 cm -2 at frequency 1 MHz shows a sharp decrease of capacitance in both cases with reversible and forward voltage. The change in the C-V characteristic of the structures after irradiation [11, 12, 14] might be because the capture of a positive charge by a trap in the oxide increases the density of surface states, resulting in radiation defects in the silicon layer adjacent toSiO2[15]. The increase in capacitance via decreasing frequencies is attributed to the existence of the surface states[16].…”

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confidence: 99%

Formation of radiation-disturbed layer in Al/SiO2/n-Si structures irradiated with helium ions with energy 5 MeV

et al. 2020

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This paper focuses on researching the change in the volt-farad characteristic of the Al/SiO2/n-Si structure irradiated by helium ions with the energy of 5 MeV in different frequencies of 1 kHz; 10 kHz; 100 kHz and 1 MHz. The voltage dependence of the capacitance and the frequency dependence of the dissolution angle are measured by LCR Agilent E4980A and Agilent 4285A meter. The complex electrical module’s hodograph of irradiated structure shows that there is a formation of quasi-continuous radiation-disturbed layer at fluence 1012 cm-2 with U < -7 V and at 1013 cm-2 with U < -20 V, which enhances the speed of charged particles, thereby increasing the reverse current in the irradiated structure.

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Influence of radiation defects on electrical losses in silicon diodes irradiated with electrons

Cited by 4 publications

References 20 publications

Influence of Defects Introduced by Irradiation with 4-9 MeV Helium Ions on Impedance of Silicon Diodes

Influence of Defects Introduced by Irradiation with 4-9 MeV Helium Ions on Impedance of Silicon Diodes

Equivalent Circuit of Al/SiO2/n-Si Structures Irradiated by Helium Ions with Energy 5 MeV at Fluence 1012 cm-2

Formation of radiation-disturbed layer in Al/SiO2/n-Si structures irradiated with helium ions with energy 5 MeV

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