Influence of radiation intensity and lead concentration in the room-temperature coloring of KBr

F‐center effects in the luminescent properties of KCl 1–x Br x with divalent lead impurity

“…The F-H pairs influence decisively the first stage of the coloration curves as well as the different stages of the coloration curve. These results are in agreement with previous findings [10] in KCl-KBr and KBr:Pb 2+ [11,12], although with different compositions to those used here.…”

Coloration dependence in the thermoluminescence properties of the double doped NaCl single crystals under gamma irradiation

“…It shows the corresponding evolution of the coloring curves for different dose rates of irradiation. The curves obtained are quite similar and they do not cross each other [4]. It is possible to assume that this particular situation corresponds to the case in which all the impurity ions are in solution in the sample.…”

Radiation defects manipulation by ultrasound in ionic crystals

“…It is worth noting that the efficiency of the radiation-induced coloring strongly depends on the alkali halide crystal used as well as on the nature of the impurity complexes present in the crystal. In particular, an enhanced dipole-aggregation rate and decreased concentration of impurity-vacancy dipoles have been reported to occur in doped alkali halides owing to room-temperature X-ray irradiation [3]. The oxygen contamination has been observed to influence the radiation damage in CsI crystals [16].…”

“…Moreover, this has been found to be of particular importance when studying the kinetics of radiation-induced coloring in alkali halides (see, for example, [3] and references therein). Given that special emphasis should be made on the processes of impurity precipitation due to irradiation and their interplay with the color center production, it is furthermore expected that these would influence the defect annealing during UDM.…”

“…Among numerous studies done, one can mention radiation-related changes in optical properties of ionic crystals [1]- [3] and II-VI compounds [4], and radiation-induced generation of point defects in semiconductors [5]- [7] which can substantially affect the electrical characteristics of silicon-based detectors [8]. These substances are widely used as scintillator materials in detector and calorimeter systems for the purposes of high-energy physics and medicine.…”