Influence of radiative and non-radiative recombination on the minority carrier lifetime in midwave infrared InAs/InAsSb superlattices

Höglund, Linda; Ting, David Z.; Khoshakhlagh, Arezou; Soibel, Alexander; Hill, Cory J.; Fisher, Anita M.; Keo, Sam A.; Gunapala, Sarath D.

doi:10.1063/1.4835055

Cited by 101 publications

(46 citation statements)

References 16 publications

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“…In a recent study, the recombination mechanism limiting the minority carrier lifetime in these superlattices was identified as the radiative lifetime [7]. In that study, the SRH and Auger lifetimes were estimated to $10 ls and $50 ls, respectively, at 77 K, whereas the radiative lifetime was in the order of 3 ls [7]. The terms in Eq.…”

Section: Contents Lists Available At Sciencedirectmentioning

confidence: 98%

“…The InAs/ InAsSb SL structure and the growth conditions were nominally the same as described in detail in Ref. [7]. The SLs bandgaps and minority carrier lifetimes were measured by photoluminescence (PL) and optical modulation response (OMR).…”

Section: Contents Lists Available At Sciencedirectmentioning

confidence: 99%

“…In addition, Sb-based superlattices also have the advantages of lower Auger generated dark current and reduced tunneling currents [5,6], which shows great promise for high temperature operation of infrared detectors based on this material. For MWIR InAs/InAsSb superlattices, the minority carrier lifetimes reported spread in the range from 1.8 ls to 9 ls and it is not clear what is causing the large spread in lifetime [3,7]. One parameter that could affect the minority carrier lifetime is the background doping, which varies between different molecular beam epitaxy (MBE) reactors and which also can vary between growths performed at different times in the same MBE reactor.…”

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confidence: 95%

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Influence of carrier concentration on the minority carrier lifetime in mid-wavelength infrared InAs/InAsSb superlattices

Höglund

Ting

Soibel

et al. 2015

Infrared Physics & Technology

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Section: Contents Lists Available At Sciencedirectmentioning

confidence: 98%

Section: Contents Lists Available At Sciencedirectmentioning

confidence: 99%

mentioning

confidence: 95%

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Influence of carrier concentration on the minority carrier lifetime in mid-wavelength infrared InAs/InAsSb superlattices

Höglund

Ting

Soibel

et al. 2015

Infrared Physics & Technology

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“…However, in the extrinsic region the dominant recombination mechanisms are radiative and SRH, assuming the SRH lifetime does not depend on carrier concentration, for higher doping condition the radiative processes are expected to become dominant. 2 Noteworthy is the behavior of the Auger(e-e) in the extrinsic region of the semiconductor. This behavior is attributed to the observation that the Auger lifetime s Auger = Const.…”

Section: Measured and Modeled Recombination Lifetimementioning

confidence: 99%

Opto-electronic Properties of Mid-Wavelength: n Type II InAs/InAs1−x Sb x and Hg1−x Cd x Te

Wames

Roger²

2016

Journal of Elec Materi

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There is significant interest in mid-wavelength type II strained layer superlattices (SLSs) and HgCdTe material systems for background limited performance, operating at significantly higher temperature, T ‡ 150 K, than InSb, T % 80-90 K. A precise knowledge of the electronic and optical properties of these materials is desirable since they determine detector performance and are needed for input parameters in self-consistent physics-based predictive models. Recently, data on the optical absorption coefficient, and the hole minority carrier lifetime has become available, suggesting that in the extrinsic region the limiting recombination processes in mid-wavelength type II Ga-free SLSs are radiative and Shockley-Read-Hall (SRH). These findings provide the opportunity for comparisons with mid-wavelength HgCdTe. The comparisons show that the radiative recombination coefficients are similar; however, the SRH lifetime limited to 9 ls for the SLS implies that the dark current density is expected to be limited by bulk generation-recombination (G-R) SRH processes for temperatures below 160 K; hence requiring heterojunction designs to suppress the G-R dark currents and be diffusion limited. Midwavelength infrared HgCdTe photodiodes are shallow p + n photovoltaic devices and because of the very long SRH hole lifetime are diffusion radiatively limited photodiodes down to 80 K.

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“…25,26 Furthermore, trends of increase followed by decrease at 77-300 K are also reported in n type InAs/InAs 0.72 Sb 0.28 superlattice and HgCdTe due to competitive relaxation via different channels. [27][28][29] In terms of temperature, the SRH, Auger and radiative lifetimes can be described by Refs. 25-28,30 τ SRH =P 1 T 1/2 , τ Rad =P 2 T 3/2 , and τ Auger = P 3 ( equation (1), µ = m e /m h , m e and m h are the electron and hole effective masses, respectively.…”

Section: F Photoluminescence Lifetimesmentioning

confidence: 99%

Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy

Zhang

Yuan

et al. 2017

AIP Advances

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We report structural properties as well as electrical and optical behaviors of beryllium (Be)-doped InGaAsP lattice-matched to InP grown by gas source molecular beam epitaxy. P type layers present a high degree of compensation on the order of 1018 cm−3, and for Be densities below 9.5×1017 cm−3, they are found to be n type. Enhanced incorporation of oxygen during Be doping is observed by secondary ion mass spectroscopy. Be in forms of interstitial donors or donor-like Be-O complexes for cell temperatures below 800°C is proposed to account for such anomalous compensation behaviors. A constant photoluminescence energy of 0.98 eV without any Moss-Burstein shift for Be doping levels up to 1018 cm−3 along with increased emission intensity due to passivation effect of Be is also observed. An increasing number of minority carriers tend to relax via Be defect state-related Shockley-Read-Hall recombination with the increase of Be doping density.

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Influence of radiative and non-radiative recombination on the minority carrier lifetime in midwave infrared InAs/InAsSb superlattices

Cited by 101 publications

References 16 publications

Influence of carrier concentration on the minority carrier lifetime in mid-wavelength infrared InAs/InAsSb superlattices

Influence of carrier concentration on the minority carrier lifetime in mid-wavelength infrared InAs/InAsSb superlattices

Opto-electronic Properties of Mid-Wavelength: n Type II InAs/InAs1−x Sb x and Hg1−x Cd x Te

Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy

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