Influence of sapphire substrate with miscut angles on hexagonal boron nitride films grown by halide vapor phase epitaxy

Chen, Minghao; Zhang, Qian; Fang, Chaoyang; Shen, Zhipeng; Lu, Yuhao; Liu, Ting; Tan, Shuxin; Zhang, J.L.

doi:10.1039/d3ce00528c

CrystEngComm

2023

DOI: 10.1039/d3ce00528c

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Influence of sapphire substrate with miscut angles on hexagonal boron nitride films grown by halide vapor phase epitaxy

Minghao Chen

Qian Zhang

Chaoyang Fang

et al.

Abstract: (002) hexagonal boron nitride (h-BN) micron films were epitaxially grown on c-plane sapphire substrates with miscut angles to m-plane (m-miscut angle) by high-temperature and low-pressure halide vapor phase epitaxy.

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2024

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Synthesis and Characterization of Boron Nitride Thin Films Deposited by High-Power Impulse Reactive Magnetron Sputtering

Stankus,

Vasiliauskas,

Guobienė

et al. 2024

Molecules

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In the present research, hexagonal boron nitride (h-BN) films were deposited by reactive high-power impulse magnetron sputtering (HiPIMS) of the pure boron target. Nitrogen was used as both a sputtering gas and a reactive gas. It was shown that, using only nitrogen gas, hexagonal-boron-phase thin films were synthesized successfully. The deposition temperature, time, and nitrogen gas flow effects were studied. It was found that an increase in deposition temperature resulted in hydrogen desorption, less intensive hydrogen-bond-related luminescence features in the Raman spectra of the films, and increased h-BN crystallite size. Increases in deposition time affect crystallites, which form larger conglomerates, with size decreases. The conglomerates’ size and surface roughness increase with increases in both time and temperature. An increase in the nitrogen flow was beneficial for a significant reduction in the carbon amount in the h-BN films and the appearance of the h-BN-related features in the lateral force microscopy images.

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Synthesis and Characterization of Boron Nitride Thin Films Deposited by High-Power Impulse Reactive Magnetron Sputtering

Stankus,

Vasiliauskas,

Guobienė

et al. 2024

Molecules

View full text Add to dashboard Cite

show abstract

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Influence of sapphire substrate with miscut angles on hexagonal boron nitride films grown by halide vapor phase epitaxy

Abstract: (002) hexagonal boron nitride (h-BN) micron films were epitaxially grown on c-plane sapphire substrates with miscut angles to m-plane (m-miscut angle) by high-temperature and low-pressure halide vapor phase epitaxy.

Cited by 1 publication

References 55 publications

Synthesis and Characterization of Boron Nitride Thin Films Deposited by High-Power Impulse Reactive Magnetron Sputtering

Synthesis and Characterization of Boron Nitride Thin Films Deposited by High-Power Impulse Reactive Magnetron Sputtering

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