In alignment with the increasing demand for larger storage
capacity
and longer data retention, the electrical control of magnetic anisotropy
has been a research focus in the realm of spintronics. Typically,
magnetic anisotropy is determined by grain dimensionality, which is
set during the fabrication of magnetic thin films. Despite the intrinsic
correlation between magnetic anisotropy and grain dimensionality,
there is a lack of experimental evidence for electrically controlling
grain dimensionality, thereby impairing the efficiency of magnetic
anisotropy modulation. Here, we demonstrate an electric field control
of grain dimensionality and prove it as the active mechanism for tuning
interfacial magnetism. The reduction in grain dimensionality is associated
with a transition from ferromagnetic to superparamagnetic behavior.
We achieve a nonvolatile and reversible modulation of the coercivity
in both the ferromagnetic and superparamagnetic regimes. Subsequent
electrical and elemental analysis confirms the variation in grain
dimensionality upon the application of gate voltages, revealing a
transition from a multidomain to a single-domain state, accompanied
by a reduction in grain dimensionality. Furthermore, we exploit the
influence of grain dimensionality on domain wall motion, extending
its applicability to multilevel magnetic memory and synaptic devices.
Our results provide a strategy for tuning interfacial magnetism through
grain size engineering for advancements in high-performance spintronics.