Influence of Si doping on the structural and optical properties of InGaN epilayers

Abstract

Influence of Si doping on the structural and optical properties of InGaN epilayers * Lu Ping-Yuan(卢平元) a)b) , Ma Zi-Guang(马紫光) b) , Su Shi-Chen(宿世臣) a) , Zhang Li(张 力) a) , Chen Hong(陈 弘) b) † , Jia Hai-Qiang(贾海强) b) , Jiang Yang(江 洋) b) , Qian Wei-Ning(钱卫宁) a) , Wang Geng(王 耿) a) , Lu Tai-Ping(卢太平) b) , and He Miao(何 苗) a) ‡

Enhancement in solar hydrogen generation efficiency using InGaN photoelectrode after surface roughening treatment with nano-sized Ni mask

“…[3][4][5][6] Among them, InGaN epilayer is one of the most promising candidate for application due to its adjustable direct band gap perfectly matching the solar spectrum and stability in acidic/alkaline solution under sun light. [7][8][9][10] So far, some efforts have been done including nano-rod structure, electrochemical treatment, and so on. [11][12][13][14] There are still not enough research in InGaN-based photoelectrode.…”