Influence of SiC surface defects on materials removal in atmospheric pressure plasma polishing

Jia, Guanglu; Li, Bing; Zhang, Jufan

doi:10.1016/j.commatsci.2018.01.025

Cited by 20 publications

(14 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To investigate the influence of surface defects on PAP, quantum chemistry simulation was used to analyze the interface reaction characteristics of single-crystal SiC in Jia's study [13]. The results showed that the surface defects can improve the MRR.…”

Section: Plasma-assisted Polishing (Pap)mentioning

confidence: 99%

“…Based on chemical reaction, single-crystal SiC precision polishing technologies have been widely investigated in recent years, such as chemical mechanical polishing (CMP) [10,11], plasma-assisted polishing (PAP) [12,13], photocatalytic chemical mechanical polishing (PCMP) [14], electrochemical mechanical polishing (ECMP) [15,16], catalyst-referred etching (CARE) [17,18], and anodic etching [19]. These studies mainly focused on improving the material removal rate (MRR) and surface quality of single-crystal SiC.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A Review on Precision Polishing Technology of Single-Crystal SiC

Liu

et al. 2022

Crystals

View full text Add to dashboard Cite

Single-crystal SiC is a typical third-generation semiconductor power-device material because of its excellent electronic and thermal properties. An ultrasmooth surface with atomic surface roughness that is scratch free and subsurface damage (SSD) free is indispensable before its application. As the last process to reduce the surface roughness and remove surface defects, precision polishing of single-crystal SiC is essential. In this paper, precision polishing technologies for 4H-SiC and 6H-SiC, which are the most commonly used polytypes of single-crystal SiC, such as chemical mechanical polishing (CMP), photocatalytic chemical mechanical polishing (PCMP), plasma-assisted polishing (PAP), electrochemical mechanical polishing (ECMP), and catalyst-referred etching (CARE), were reviewed and compared with emphasis on the experimental setup, polishing mechanism, material removal rate (MRR), and surface roughness. An atomically smooth surface without SSD can be obtained by CMP, PCMP, PAP, and CARE for single-crystal SiC. However, their MRRs are meager, and the waste treatment after CMP is difficult and expensive. Moreover, PAP’s operation is poor due to the complex polishing system, plasma generation, and irradiation devices. A high MRR can be achieved by ECMP. In addition, it is an environmentally friendly precision polishing process for single-crystal SiC since the neutral salt solution is generally used as the electrolyte in ECMP. However, the formation of the egglike protrusions at the oxide/SiC interface during anodic oxidation would lead to a bigger surface roughness after ECMP than that after PAP is processed. The HF solution used in CARE was toxic, and Pt was particularly expensive. Ultrasonic vibration-assisted single-crystal SiC polishing and electrolyte plasma polishing (EPP) were discussed; furthermore, the research direction of further improving the surface quality and MRR of single-crystal SiC was prospected.

show abstract

Section: Plasma-assisted Polishing (Pap)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Review on Precision Polishing Technology of Single-Crystal SiC

Liu

et al. 2022

Crystals

View full text Add to dashboard Cite

show abstract

“…Channel length was also fixed at 14 mm (Table 2). Therefore, testing this range of widths assesses the feasibility of modern manufacturing methods and their suitability to these devices within this operating window [28][29][30][31].…”

Section: Variation In Channel Widthmentioning

confidence: 99%

Numerical Analysis of Microchannels Designed for Heat Sinks

McCormack

Zhang

2021

Nanomanuf Metrol

Self Cite

View full text Add to dashboard Cite

Conjugate heat transfer is numerically investigated using a three-dimensional computational fluid dynamics approach in various microchannel geometries to identify a high-performance cooling method for piezoelectric ceramic stacks and spindle units in high-precision machines. Straight microchannels with rectangular cross sections are first considered, showing the performance limitations of decreasing the size of the microchannels, so other solutions are needed for high applied heat fluxes. Next, many microchannel designs, focusing on streamwise geometric variation, are compared to straight channels to assess their performances. Sinusoidally varying channels produce the highest heat transfer rates of those studied. Thus, their optimization is considered at a channel width and height of 35 and 100 μm, respectively. Heat transfer increases as the amplitude and spatial frequencies of the channels increase due to increased interfacial surface area and enhanced Dean flow. The highest performance efficiencies are observed at intermediate levels of amplitude and frequency, with efficiency decreasing as these geometric parameters are increased further at the onset of flow separation. The sinusoidal channel geometries are then optimized with respect to minimizing the system’s pressure drop for all applied heat fluxes between 5690 and 6510 kW/m2. Doing so created an optimal geometry curve and showed that all geometries in this region had amplitudes close to 40 μm. Therefore, imposing a fixed heat flux requirement for a case study of cooling piezoelectric ceramics, the optimized sinusoidal geometry decreases the system pressure drop by 79% relative to a straight channel while maintaining a larger minimum feature size.

show abstract

“…In addition, plasma etching can be highly selective to defects due to the higher material removing rate at dislocation sites caused by the lower stability of dislocation structures compared to perfect crystal lattices. 15 In this study, we proposed a plasma dry etching process for dislocation revelation of 4H-SiC regardless of the doping concentration. Two different type of plasma source have…”

Section: A C C E P T E D Mmentioning

confidence: 99%

Indiscriminate revelation of dislocations in single crystal SiC by inductively coupled plasma etching

Zhang

et al. 2019

Journal of the European Ceramic Society

View full text Add to dashboard Cite

To reveal dislocations in SiC wafers, conventionally, molten KOH etching method has been widely used. However, when highly doped sites exist on the wafer, the molten KOH etching method is not applicable owing to the enhanced isotropic electrochemical etching phenomenon. In this study, plasma etching is first applied to reveal dislocations in a 4H-SiC wafer with both highly doped and lightly doped areas. The mechanisms of dislocation revelation by dry etching have been theoretically analyzed and it has been revealed that the dislocation revelation ability of dry etching is highly related to the temperature of the etching process. The results demonstrate that inductively coupled plasma (ICP) etching can maintain its effectiveness for dislocation revelation of SiC wafers regardless of the 2 doping concentrations. This work offers an alternative approach to indiscriminately and accurately reveal dislocations in SiC wafers.

show abstract

Influence of SiC surface defects on materials removal in atmospheric pressure plasma polishing

Cited by 20 publications

References 28 publications

A Review on Precision Polishing Technology of Single-Crystal SiC

A Review on Precision Polishing Technology of Single-Crystal SiC

Numerical Analysis of Microchannels Designed for Heat Sinks

Indiscriminate revelation of dislocations in single crystal SiC by inductively coupled plasma etching

Contact Info

Product

Resources

About