2012
DOI: 10.1016/j.jssc.2012.03.061
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Influence of Sn on the thermoelectric properties of (BixSb1−x)2Te3 single crystals

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Cited by 8 publications
(5 citation statements)
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“…The positive value of S indicates hole transport, i.e., both the samples are p-type in nature. 37 According to Abrikosov et al 26 , the Sb 2 Te 3 crystals prepared from the melt of stoichiometric composition 2Sb/3Te exhibit always a surplus of Sb. The underlying reason is that Te partially segregates during the growth.…”
Section: Resultsmentioning
confidence: 99%
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“…The positive value of S indicates hole transport, i.e., both the samples are p-type in nature. 37 According to Abrikosov et al 26 , the Sb 2 Te 3 crystals prepared from the melt of stoichiometric composition 2Sb/3Te exhibit always a surplus of Sb. The underlying reason is that Te partially segregates during the growth.…”
Section: Resultsmentioning
confidence: 99%
“…26 The over-stoichiometric Sb atoms occupy, reported by other research groups. [37][38][39][40] Further, the value of S for the semiconducting sample (S2)…”
Section: Resultsmentioning
confidence: 99%
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“…Several dopants such as In (PE = 1.78) or Ga (PE = 1.81) [ 33,34 ] have been shown to effectively suppress the antisite defects in Sb 2 Te 3 and despite the fact that In and Ga belong to the group III elements, both act as donors. The case of Sn (PE = 1.96) in Sb 2 Te 3 is more complex since its amphoteric character was reported by Santhanam et al, [ 35 ] even though Kulbachinskii et al [ 36 ] have only reported an acceptor character in single crystals. At low Sn contents (below 2 at.%), Sn acts as a donor while at doping levels higher than 3 at.% Sn acts as an acceptor.…”
Section: Doi: 101002/aelm201400008mentioning
confidence: 95%
“…[ 11 ] Due to Sn doping there is a significant enhancement in the value of the thermopower of Bi 2 Te 3 single crystal as Sn offers resonant states enhancing the DOS near the Fermi level. [ 12 ] As stated earlier, the reduction of κ normall also can enhance TE properties. The reduction occurs by an increase in phonon–phonon‐scattering near the grain boundaries, structural defect, and interfaces in the nanostructured materials.…”
Section: Introductionmentioning
confidence: 91%