Influence of Sn resonance states on the electrical homogeneity of Bi2Te3 single crystals

Zhitinskaya, M. K.; Немов, С. А.; Svechnikova, T. E.; Reinshaus, P.; Müller, E.

doi:10.1134/1.1331791

Cited by 11 publications

(6 citation statements)

References 1 publication

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“…In addition to reducing κ lat , researchers also tried to enhance ZT values of Bi 2 Te 3 -based alloys by increasing S 2 σ through band structure engineering. For instance, Sn was found to form resonant impurity states in the valence band of Bi 2 Te 3 , thereby largely enhancing S of the host material at cryogenic temperatures through resonant scattering [50,51]. The well-accepted best ZT values reported for p-and n-type Bi 2 Te 3 -based thermoelectric alloys are approximately 1.5 [29,47] and 1.2 [5] (both at approx.…”

Section: Thermoelectric Materialsmentioning

confidence: 99%

Thermoelectric power generation: from new materials to devices

Tan

Ohta

Kanatzidis

2019

Phil. Trans. R. Soc. A.

136

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Thermoelectric technology offers the opportunity of direct conversion between heat and electricity, and new and exciting materials that can enable this technology to deliver higher efficiencies have been developed in recent years. This mini-review covers the most promising advances in thermoelectric materials as they pertain to their potential in being implemented in devices and modules with an emphasis on thermoelectric power generation. Classified into three groups in terms of their operating temperature, the thermoelectric materials that are most likely to be used in future devices are briefly discussed. We summarize the state-of-the-art thermoelectric modules/devices, among which nanostructured PbTe modules are particularly highlighted. At the end, key issues and the possible strategies that can help thermoelectric power generation technology move forward are considered. This article is part of a discussion meeting issue ‘Energy materials for a low carbon future’.

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Section: Thermoelectric Materialsmentioning

confidence: 99%

Thermoelectric power generation: from new materials to devices

Tan

Ohta

Kanatzidis

2019

Phil. Trans. R. Soc. A.

136

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“…The results are shown in Fig. However, in the case of doping with impurities producing resonant states, such as Sn in Bi 2 Te 3 [3,5] or Tl and In in PbTe [6], crystals are evidently homogenized. The comparison of data obtained for undoped and Sn-doped Bi 2 Te 2.94 Se 0.06 and Bi 1.99 Sn 0.01 Te 2.94 Se 0.06 solid solutions (Fig.…”

Section: Methodsmentioning

confidence: 99%

“…As shown in [1][2][3][4][5], resonant states of Sn considerably modify the electrical properties of Bi 2 Te 3 crystals. As shown in [1][2][3][4][5], resonant states of Sn considerably modify the electrical properties of Bi 2 Te 3 crystals.…”

Section: Introduction Bi 2 Te 3 -mentioning

confidence: 99%

Impurity States of Tin in Bi[sub 2]Te[sub 3 – ][sub x]Se[sub x] (x = 0.06, 0.12) Solid Solutions

Zhitinskaya¹

2004

Semiconductors

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“…When the electronically active element Sn is doped in the Bi 2 Te 3 single crystals, they create active intrinsic donor or accepter type defects. This shifts the Fermi-level in the vicinity of the density of states results in an uneven variation of the population with respect to temperature and doping [61]. Generation of antisite defects of Bi Sn on the Te Se site leads to super stoichiometry, which encourages lattice scattering [62].…”

Section: Seebeck Coefficientmentioning

confidence: 99%

Improved electrical conductivity and power factor in Sn and Se co-doped melt-grown Bi2Te3 single crystal

Hegde

Prabhu

Chattopadhyay

2021

J Mater Sci: Mater Electron

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In the current work, growth and thermoelectric characterization of tin and selenium co-doped single crystal bismuth telluride have been carried out in the range of temperature 10–400 K. The crystals show hexagonal crystal structure with R$$\overline{3 }$$ 3 ¯ m space group. The direction of growth, quality of the single crystals, the density of dislocation, and dopants effect on the inner plane structure of the crystals have been analyzed through high-resolution X-ray diffraction study. Energy dispersive analysis of X-rays approves the elemental composition, and field emission scanning electron microscopy shows uniform growth with micro precipitates on the surface of the crystals. Quasi degenerate and non-degenerate electrical resistivity is observed in the pristine and doped samples, respectively. Temperature-dependent Seebeck coefficient measurements confirm the n-type semiconducting nature of the pristine as well as doped samples. Temperature-dependent power factor of (Bi0.96Sn0.04)2Te2.7Se0.3 is found to increase by 1.1 times, and electrical resistivity reduced by 3.3 times as compared to pristine Bi2Te3.

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Influence of Sn resonance states on the electrical homogeneity of Bi2Te3 single crystals

Cited by 11 publications

References 1 publication

Thermoelectric power generation: from new materials to devices

Thermoelectric power generation: from new materials to devices

Impurity States of Tin in Bi[sub 2]Te[sub 3 – ][sub x]Se[sub x] (x = 0.06, 0.12) Solid Solutions

Improved electrical conductivity and power factor in Sn and Se co-doped melt-grown Bi2Te3 single crystal

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