Influence of source gas supply sequence on hydride vapor phase epitaxy of AlN on (0001) sapphire substrates

Togashi, Rie; Nagashima, Toru; Harada, Masahiko; Murakami, Hisashi; Kumagai, Yoshinao; Yanagi, Hiroshi; Koukitu, Akinori

doi:10.1016/j.jcrysgro.2011.10.014

Cited by 7 publications

(5 citation statements)

References 9 publications

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“…After the etching under the condition described above, the whole InGaN layer was hardly etched, and hexagonal pyramids consisting of ð10 1 1Þ facets were observed from the SEM image. These results indicate that the entire InGaN layer grown on the (0001) sapphire substrate exhibits N-polarity without mixing group-III polarity, nevertheless, InGaN was grown with group-III preflow, [18][19][20] and the growth of N-polarity InGaN preferentially occurs when THVPE is used.…”

Section: Resultsmentioning

confidence: 93%

“…Prior to the InGaN growth, InCl 3 , and GaCl 3 gases were introduced over a sapphire substrate for 10 min because group-III preflow generally leads to group-III polarity nitrides. [18][19][20] The input group-III partial pressure was fixed at 2.0 © 10 ¹4 atm. After the etching under the condition described above, the whole InGaN layer was hardly etched, and hexagonal pyramids consisting of ð10 1 1Þ facets were observed from the SEM image.…”

Section: Resultsmentioning

confidence: 99%

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Growth of thick InGaN layers by tri-halide vapor phase epitaxy

Hirasaki¹,

Asano²,

Banno³

et al. 2014

Jpn. J. Appl. Phys.

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This is the first study to report InGaN growth by tri-halide vapor phase epitaxy (THVPE) using InCl3 and GaCl3 generated by the reactions between metal sources (i.e., metallic indium and gallium) and gaseous chlorine. The influence of the surface orientation of the initial substrate on InGaN-THVPE growth was investigated using freestanding (0001) and GaN substrates. Only a N-polar InGaN epitaxial layer was obtained by THVPE because of the instability of GaCl3 adsorption toward nitrogen atoms on the Ga-polar surface. In addition, we investigated the influence of the group-III input partial pressure on the growth rate and solid composition of InGaN layers grown on a GaN substrate. The growth rate increased linearly with group-III concentration, and a maximum growth rate of 15.6 µm/h was achieved at P III = 2.0 × 10−3 atm.

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Section: Resultsmentioning

confidence: 93%

Section: Resultsmentioning

confidence: 99%

Growth of thick InGaN layers by tri-halide vapor phase epitaxy

Hirasaki¹,

Asano²,

Banno³

et al. 2014

Jpn. J. Appl. Phys.

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“…[1][2][3] It is one of the promising materials for use as the substrate of AlGaN-based deep-ultraviolet light-emitting diodes (UV-LEDs), and surface acoustic wave (SAW) devices. AlN has been fabricated by various methods, including metal-organic vapor phase epitaxy (MOVPE), [4][5][6] molecular beam epitaxy (MBE), 7,8) hydride vapor phase epitaxy (HVPE), 9,10) and pulsed laser deposition (PLD), 11) on several kinds of substrates such as Si, SiC, and sapphire. The crystalline quality of AlN fabricated using these methods is improving.…”

Section: Introductionmentioning

confidence: 99%

Effect of sputtering pressure on crystalline quality and residual stress of AlN films deposited at 823 K on nitrided sapphire substrates by pulsed DC reactive sputtering

Ohtsuka

Takeuchi

Fukuyama

2016

Jpn. J. Appl. Phys.

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Aluminum nitride (AlN) is a promising material for use in applications such as deep-ultraviolet light-emitting diodes (UV-LEDs) and surface acoustic wave (SAW) devices. In the present study, the effect of sputtering pressure on the surface morphology, crystalline quality, and residual stress of AlN films deposited at 823 K on nitrided a-plane sapphire substrates, which have high-crystalline-quality c-plane AlN thin layers, by pulsed DC reactive sputtering was investigated. The c-axis-oriented AlN films were homoepitaxially grown on nitrided sapphire substrates at sputtering pressures of 0.4–1.5 Pa. Surface damage of the AlN sputtered films increased with increasing sputtering pressure because of arcing (abnormal electrical discharge) during sputtering. The sputtering pressure affected the crystalline quality and residual stress of AlN sputtered films because of a change in the number and energy of Ar+ ions and Al sputtered atoms. The crystalline quality of AlN films was improved by deposition with lower sputtering pressure.

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“…Moreover, nearbandgap-edge absorption of AlN epilayer was critical to UV-c light emitter or detector. Threading dislocations [37,45] and intrinsic defects [46,47] can flatten the absorption edge, compensate doping level and screen shallow doping energy level.…”

Section: Raman Scatteringmentioning

confidence: 99%

Structure, optical spectra and biaxial stress of (0002) AlN epilayers grown on c‐sapphire by high‐temperature chemical vapor deposition

Zhang

Liu

Liang

2014

Physica Status Solidi (a)

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(0002) AlN epilayers were grown on c‐sapphire at temperatures of 1100, 1200, 1300, 1400, and 1500 °C, respectively, by a homebuilt high‐temperature chemical vapor deposition system. The structure, optical properties and biaxial stress of these epilayers were characterized by scanning electronic microscope, XRD, Raman scattering, and UV absorption. The results revealed that smooth layers were obtained below 1400 °C, while stripe‐shaped and hexagon‐aligned islands grew on the surface of the layer at 1500 °C due to inhomogeneous nucleation in decreased supersaturation. Moreover, the narrowing FWHM of (0002) reflection and phonon modes indicated that the crystal quality improved with increasing temperature. The optical bandgap enlarged with the increasing growth temperature, owing to decreasing dislocations and domain boundaries as well as increasing compressive stress, except that the optical bandgap shrank at 1500 °C because light scattering at the rough surface of the epilayer flattened its optical absorption edge. Furthermore, the results of XRD and Raman studies demonstrated that the biaxial stress in the epilayers turned from tensile stress to compressive stress linearly below 1.8 GPa, resulting in a biaxial stress coefficient of −1.9 cm−1 GPa−1. Therefore, the improving structure together with the increasing biaxial compressive stress of the epilayer enlarged its optical bandgap with a large coefficient of −426 meV GPa−1.

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Influence of source gas supply sequence on hydride vapor phase epitaxy of AlN on (0001) sapphire substrates

Cited by 7 publications

References 9 publications

Growth of thick InGaN layers by tri-halide vapor phase epitaxy

Growth of thick InGaN layers by tri-halide vapor phase epitaxy

Effect of sputtering pressure on crystalline quality and residual stress of AlN films deposited at 823 K on nitrided sapphire substrates by pulsed DC reactive sputtering

Structure, optical spectra and biaxial stress of (0002) AlN epilayers grown on c‐sapphire by high‐temperature chemical vapor deposition

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