Influence of Sputtering Power on the Electrical Properties of In-Sn-Zn Oxide Thin Films Deposited by High Power Impulse Magnetron Sputtering

Li, Zhi-Yue; Chen, Sheng-Chi; Huo, Qiu-Hong; Liao, Ming-Han; Dai, Mingjiang; Lin, Shisheng; Yang, Tianlin; Sun, Hui

doi:10.3390/coatings9110715

Cited by 8 publications

(8 citation statements)

References 37 publications

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“…Open Access 2023,( 17), ( 2 ):210-224 212 which represents (Ta 2 O 5 ), and this is the result of increasing the precipitated atoms and thus increasing the thickness and crystallization of the prepared film. The increase in crystallinity of the films with the increase in atomizing ability is due to the improvement of the crystalline size and the decrease in the crystalline boundaries, which is consistent with the results of the researchers in [12].…”

Section: Journal Of University Of Anbar For Pure Science (Juaps)supporting

confidence: 91%

“…Open Access 2023,( 17 The main role of the absorption of thin films at wavelengths of (300-1100 nm) is located at the absorption edge. Therefore, the increase in the atomization power and the related change in the intensity of the absorption spectrum, as shown in Figures (12), (13), and ( 14), generally lead to a decrease in the intensity of the spectrum, especially at wavelengths shorter than (500 nm), which is attributed to a decrease in crystalline defects and an increase in the grain size with an increase in the deposition temperature, which is consistent with the results of the researchers in [23].…”

Section: Journal Of University Of Anbar For Pure Science (Juaps)mentioning

confidence: 94%

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Antibacterial activity of NiTi alloy with sputtered tantalum

Alsaaidi,

Al-rawi,

Khalaf

2023

JUAPS

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A study was conducted on the use of the Mactrontronic Sputtering (DC) plasma technique by sprinkling tantalum metal (Ta) and depositing it on shape-memory nickeltitanium (NiTi) alloy and glass substrates in the presence of oxygen and argon gases. As a result, a coating of tantalum oxide (Ta 2 O 5 ) deposited on the (NiTi) alloy was obtained. The change of the atomization plasma energy on the size of the precipitated oxide particles (Ta 2 O 5 ) and its effect on the structural properties was discussed. For the membrane, the Xray diffraction (XRD) tests showed that the films prepared at energies of (10, 15, 25, 30, and 35 watts) showed an amorphous structure, and the (AFM) results confirmed that the thinly deposited films consisted of spherical particles. Moreover, the results of the optical properties study showed the effect of annealing (heat treatment), whereby the annealing improved all the optical parameters of the deposited films. In addition, the contact angle measurements showed that the (Ta 2 O 5 ) films exhibited hydrophilic characteristics and increased wettability for the (NiTi) alloy, which normally contributes to enhancing its resistance to bacteria and facilitating cell connection. Bacterial antimicrobial assays demonstrated that the deposited membrane exhibited antibacterial activity against both negative and positive bacteria. In particular, the test results revealed that the (NiTi) alloy samples coated with (Ta 2 O 5 ) membrane had a higher bacteria-killing percentage for both negative and positive bacteria compared to the uncoated samples.

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Section: Journal Of University Of Anbar For Pure Science (Juaps)supporting

confidence: 91%

Section: Journal Of University Of Anbar For Pure Science (Juaps)mentioning

confidence: 94%

Antibacterial activity of NiTi alloy with sputtered tantalum

Alsaaidi,

Al-rawi,

Khalaf

2023

JUAPS

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“…Transparent conductive oxides (TCOs) have already received much attention in recent years due to their high transmittance in the visible light range, good electrical conductivity, excellent adhesion to the substrates, and stable chemical property [1][2][3][4][5]. Among those advantages, the properties of electrical conductivity and optical transparency are mutually exclusive, and how to combine them in films becomes a great challenge [6].…”

Section: Introductionmentioning

confidence: 99%

Influence of annealing temperature on the optoelectronic properties of ITZO thin films

et al. 2021

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In this work, the electrical conductivity and optical transparency of the In-Sn-Zn-O (ITZO) films annealed at different temperatures were investigated. The results show that the ITZO films transformed from amorphous phase to crystalline phase after annealed in the air. The transmittance of the films improves significantly and all exceed 88%. Meanwhile, the annealed ITZO films exhibit a significant enhancement in conductivity. In particular, ITZO film annealed at 650 °C has high electrical conductivity (∼4.94×10 2 S cm −1 ) and an excellent figure of merit (∼5.94×10 −4 Ω −1 ). Moreover, ITZO thin film transistors were prepared and their performance was tested. After annealing, the high electrical properties of the active layer make the gate regulation ability of the thin film transistors degrade. The annealed films with excellent optoelectronic properties can be applied to transparent electrodes.

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“…In addition to the aforementioned AOS materials, amorphous indium tin zinc oxide (a-ITZO) has attracted considerable attention owing to its advantageous characteristics, including large carrier mobility and high carrier concentrations 12 , 13 . The primary factor contributing to the high electron carrier mobility within the conduction‒band minimum of a-ITZO is the increasing overlap area between the orbitals of In 5 s and Sn 5 s. These orbitals possess strong divergence, high symmetry, and an electronic configuration similar to that of (n‒1)d 10 n 0 (n ≥ 4) 14 – 16 .…”

Section: Introductionmentioning

confidence: 99%

Enhanced electrical properties of amorphous In-Sn-Zn oxides through heterostructuring with Bi2Se3 topological insulators

Wang,

Lo,

Cheng

et al. 2024

Sci Rep

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Amorphous indium tin zinc oxide (a-ITZO)/Bi2Se3 nanoplatelets (NPs) were fabricated using a two-step procedure. First, Bi2Se3 NPs were synthesized through thermal chemical vapor deposition at 600 °C on a glass substrate, and then a-ITZO was deposited on the surface of the Bi2Se3 NPs via magnetron sputtering at room-temperature. The crystal structures of the a-ITZO/Bi2Se3 NPs were determined via X-ray diffraction spectroscopy and high-resolution transmission electron microscopy. The elemental vibration modes and binding energies were measured using Raman spectroscopy and X-ray photoelectron spectroscopy. The morphologies were examined using field-emission scanning electron microscopy. The electrical properties of the a-ITZO/Bi2Se3 NPs were evaluated using Hall effect measurements. The bulk carrier concentration of a-ITZO was not affected by the heterostructure with Bi2Se3. In the case of the Bi2Se3 heterostructure, the carrier mobility and conductivity of a-ITZO were increased by 263.6% and 281.4%, respectively, whereas the resistivity of a-ITZO was reduced by 73.57%. This indicates that Bi2Se3 significantly improves the electrical properties of a-ITZO through its heterostructure, expanding its potential applications in electronic and thermoelectric devices.

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Influence of Sputtering Power on the Electrical Properties of In-Sn-Zn Oxide Thin Films Deposited by High Power Impulse Magnetron Sputtering

Cited by 8 publications

References 37 publications

Antibacterial activity of NiTi alloy with sputtered tantalum

Antibacterial activity of NiTi alloy with sputtered tantalum

Influence of annealing temperature on the optoelectronic properties of ITZO thin films

Enhanced electrical properties of amorphous In-Sn-Zn oxides through heterostructuring with Bi2Se3 topological insulators

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