Influence of Stacking Disorder on the Raman Spectrum of 3C-SiC

Rohmfeld, S.; Hundhausen, Martin; Ley, L.

doi:10.1002/(sici)1521-3951(199909)215:1<115::aid-pssb115>3.0.co;2-3

Cited by 33 publications

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“…Given that such laser-annealing/high-temperature treatment induces analogous effects, i.e. improves the quality of the 3C-SiC Raman spectra due to the suppression of microstructural disorder40, we can reasonably assume that a similar effect is taking place in the case of Sb 2 Se 3 as well.…”

Section: Resultsmentioning

confidence: 99%

Sb2Se3 under pressure

Efthimiopoulos

Zhang

Kucway

et al. 2013

Sci Rep

104

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Selected members of the A2B3 (A = Sb, Bi; B = Se, Te) family are topological insulators. The Sb2Se3 compound does not exhibit any topological properties at ambient conditions; a recent high-pressure study, however, indicated that pressure transforms Sb2Se3 from a band insulator into a topological insulator above ~2 GPa; in addition, three structural transitions were proposed to occur up to 25 GPa. Partly motivated by these results, we have performed x-ray diffraction and Raman spectroscopy investigations on Sb2Se3 under pressure up to 65 GPa. We have identified only one reversible structural transition: the initial Pnma structure transforms into a disordered cubic bcc alloy above 51 GPa. On the other hand, our high-pressure Raman study did not reproduce the previous results; we attribute the discrepancies to the effects of the different pressure transmitting media used in the high-pressure experiments. We discuss the structural behavior of Sb2Se3 within the A2B3 (A = Sb, Bi; B = Se, Te) series.

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Section: Resultsmentioning

confidence: 99%

Sb2Se3 under pressure

Efthimiopoulos

Zhang

Kucway

et al. 2013

Sci Rep

104

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“…(13) at specific values ofk 0 s0. Second, in their ''Random Stacking Fault'' model of disorder in silicon carbide, Rohmfeld et al [181,208] used a Bond Polarisability Model (BPM) to calculate the influence of stacking defects occurring with DL interspacing. They concluded to the extinction of BZc modes to the benefit of modes with wavevectors equal to k m ¼ (2m þ 1)p/DL; m ¼ 0,1,2. which is analogous to the application of Eq.…”

Section: The Phonon Confinement Model (Pcm)mentioning

confidence: 95%

“…It is nothing but a coherence length which may correspond to an actual grain size [179,191,202e205] but also to defects/impurities interspacing [185,196,200,206,207] or the size of cation-ordered domains in incommensurate phases [91], undamaged crystalline domains in ion-implanted GaAs [198], polytypic domains (see Fig. 16 and associated comments) [181,208,209] or clusters in semiconducting alloys [182,183,210] and ferroelectrics [12]. The physical interpretation of L therefore is a key element.…”

Section: The Phonon Confinement Model (Pcm)mentioning

confidence: 99%

“…(9). This assumes all crystallites have the same shape e either spherical [181] or orthorhombic [187] e and size, whereas the actual distributions must be taken into account in a model describing reality [184,192,202,216,217]. (iii) The PCM neglects surface/interface phonons: the PCM progressively loses its relevance when the particle size decreases and the surface [218e224]/interface [219,225] modes (which it does not account for) become preponderant in the signal.…”

Section: The Phonon Confinement Model (Pcm)mentioning

confidence: 99%

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Raman Spectroscopy of nanomaterials: How spectra relate to disorder, particle size and mechanical properties

Gouadec

Colomban

2007

Progress in Crystal Growth and Characterization of Materials

943

724

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The purpose of this review is to provide non-specialists with a basic understanding of the information micro-Raman Spectroscopy (mRS) may yield when this characterization tool is applied to nanomaterials, a generic term for describing nano-sized crystals and bulk homogeneous materials with a structural disorder at the nanoscale e typically nanoceramics, nanocomposites, glassy materials and relaxor ferroelectrics. The selected materials include advanced and ancient ceramics, semiconductors and polymers developed in the form of dots, wires, films, fibres or composites for applications in the energy, electronic and aeronauticseaerospace industries. The text is divided into five sections:

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“…Examples include Rohmfeld et al . who used Raman to look at stacking faults in single crystal 3C SiC and polycrystal 3C SiC, both for electronics applications. Nakashima and Harima showed that Raman could also be used to examine stacking faults in 6H SiC.…”

Section: Introductionmentioning

confidence: 99%

Raman Micro‐Spectroscopy of Polytype and Structural Changes in 6H‐Silicon Carbide due to Machining

Groth

Haber

Mann

2014

Int J Applied Ceramic Tech

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SiC is an important structural ceramic with many polytypes that differ by the stacking of their crystal planes. Machining mechanically deforms the structure giving stacking faults and different polytypes. This can lead to inferior performance and an increased risk of failure. Raman micro‐spectroscopy with different wavelengths, in confocal and normal settings, was used to quantify machining damage. Changes in the ratio of characteristic peaks, peak intensities versus peak positions, and additional Raman peaks were found. These are due to statistical increases in stacking faults and new phases (4H and 3C). The damage is found to extend several micrometer subsurfaces.

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Influence of Stacking Disorder on the Raman Spectrum of 3C-SiC

Cited by 33 publications

References 0 publications

Sb2Se3 under pressure

Sb2Se3 under pressure

Raman Spectroscopy of nanomaterials: How spectra relate to disorder, particle size and mechanical properties

Raman Micro‐Spectroscopy of Polytype and Structural Changes in 6H‐Silicon Carbide due to Machining

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