Influence of strong reverse-bias on the leakage behavior of light-emitting diodes

Wang, Y.N.; Tseng, C. Y.; Chen, Y.C.; Chen, N. C.

doi:10.1109/cleopr.2007.4391714

Cited by 2 publications

(1 citation statement)

References 4 publications

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“…The stress induced on the die during the indentation process may have an affect on the active layer that probably causes small defects. A similar phenomena was reported by Wang et al in their investigation on leakage current of an LED [33]. Their finding confirms that damage to an LED increases the number of defects and leads to a leakage current pathway in the active layer.…”

Section: Failure Analysis Of Indented Chips Before and After Tc Testsupporting

confidence: 88%

Impact of severe cracked germanium (111) substrate on aluminum indium gallium phosphate light-emitting-diode’s electro-optical performance

Annaniah¹,

Devarajan

2016

Open Physics

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Abstract:Cracked die is a serious failure mode in the Light Emitting Diode (LED) industry -affecting LED quality and long-term reliability performance. In this paper an investigation has been carried out to find the correlation between severe cracked germanium (Ge) substrate of an aluminum indium gallium phosphate (AlInGaP) LED and its electrooptical performance after the Temperature Cycle (TC) test. The LED dice were indented at several bond forces using a die bonder. The indented dice were analysed using a Scanning Electron Microscope (SEM). The result showed that severe cracks were observed at 180 gF onward. As the force of indentation increases, crack formation also becomes more severe thus resulting in the chipping of the substrate. The cracked dies were packaged and the TC test was performed. The results did not show any electro-optical failure or degradation, even after a 1000 cycle TC test. Several mechanically cross-sectioned cracked die LEDs, were analysed using SEM and found that no crack reached the active layer. This shows that severely cracked Ge substrate are able to withstand a −40 ∘ C/+100 ∘ C TC test up to 1000 cycles and LED optical performance is not affected. A small leakage current was observed in all of the cracked die LEDs in comparison to the reference unit. However, this value is smaller than the product specification and is of no concern.

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Section: Failure Analysis Of Indented Chips Before and After Tc Testsupporting

confidence: 88%

Impact of severe cracked germanium (111) substrate on aluminum indium gallium phosphate light-emitting-diode’s electro-optical performance

Annaniah¹,

Devarajan

2016

Open Physics

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show abstract

An investigation on AlInGaP die crack during LED die attach process

Annaniah¹,

Devarajan²

2016

2016 IEEE 37th International Electronics Manufacturing Technology (IEMT) &Amp; 18th Electronics Materials and Packaging (EMAP)

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Influence of strong reverse-bias on the leakage behavior of light-emitting diodes

Abstract: Leakage current is an important property in InGaN light-emitting diodes (LEDs). An LED chip is operated using strong reverse-bias to increase its leakage current. The leakage current behavior of the operated LED chip is compared with that of an unoperated LED chip.

Cited by 2 publications

References 4 publications

Impact of severe cracked germanium (111) substrate on aluminum indium gallium phosphate light-emitting-diode’s electro-optical performance

Impact of severe cracked germanium (111) substrate on aluminum indium gallium phosphate light-emitting-diode’s electro-optical performance

An investigation on AlInGaP die crack during LED die attach process

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