2015
DOI: 10.1103/physrevb.92.075435
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Influence of structure and thermodynamic stability on electronic properties of two-dimensional SiC, SiGe, and GeC alloys

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Cited by 61 publications
(32 citation statements)
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“…As such, the internal energy is calculated by , where x j is the probability distribution for the occurence of a cluster with configuration j . As described elsewhere 51,52,54,55 , the occurence probability x j of equivalence class j can be estimated by the constrained minimization of the Helmholtz free energy, i.e., , through the GQCA, by considering the probability normalization and average of composition x as calculated by 51,52,57 . Thereby, the distribution is given bywhere , and is an adimensional parameter obtained by the average composition constrain, and g j is the degeneracy defined to each j as described in Table 1.…”
Section: Cluster Expansion and Thermodynamic Treatmentmentioning
confidence: 99%
“…As such, the internal energy is calculated by , where x j is the probability distribution for the occurence of a cluster with configuration j . As described elsewhere 51,52,54,55 , the occurence probability x j of equivalence class j can be estimated by the constrained minimization of the Helmholtz free energy, i.e., , through the GQCA, by considering the probability normalization and average of composition x as calculated by 51,52,57 . Thereby, the distribution is given bywhere , and is an adimensional parameter obtained by the average composition constrain, and g j is the degeneracy defined to each j as described in Table 1.…”
Section: Cluster Expansion and Thermodynamic Treatmentmentioning
confidence: 99%
“…Multilayer SiC resembles the bulk SiC in their structure and properties. Like bulk SiC, both multilayer and bilayer SiC have indirect band gap [18][19][20].…”
Section: Introductionmentioning
confidence: 99%
“…Multilayer SiC resembles the bulk SiC in their structure and properties. Like bulk SiC, both multilayer and bilayer SiC have indirect band gap [ 18 , 19 , 20 ]. A detailed discussion about the structure, properties, and applications of 2D SiC has been provided in our very recent review paper [ 5 ].…”
Section: Introductionmentioning
confidence: 99%
“…The conductivity of germanium without doping or alloying is not good, and germanium and carbon composite material has been proposed as a potential anode material with good conductivity due to sp 2 -carbon being in composite [ 22 , 23 , 24 , 25 ]. Recently, a graphene-like Ge/C composite called germagraphene (g-GeC) has been proposed, predicted by first-principles calculations to be a two-dimensional nonmagnetic semiconductor with a direct band gap of about 2.1 eV at K (K’) points [ 26 , 27 , 28 , 29 , 30 ]. The structure is the same as germanene, silicene and other honeycomb-like structures, but different from germanium is that it is a plane structure without buckling height [ 29 ].…”
Section: Introductionmentioning
confidence: 99%