Influence of substrate on the pulsed laser deposition growth and microwave behaviour of KTa0.6Nb0.4O3 potassium tantalate niobate ferroelectric thin films

Rousseau, Anthony; Laur, Vincent; Députier, Stéphanie; Bouquet, Valérie; Guilloux-Viry, M.; Tanné, Gérard; Laurent, Paul; Huret, Fabrice; Перрин, А.

doi:10.1016/j.tsf.2007.09.029

Cited by 25 publications

(17 citation statements)

References 46 publications

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“…This result is in good agreement with the microstructure previously observed by SEM (Figures 2a and 2b). Though examples of epitaxial growth of perovskite on sapphire exist [34,35], such crystalline growth was unexpected due to the large mismatch between the KNN perovskite phase and the R-plane sapphire (∼14%) and, at our knowledge, has not been reported yet.…”

Section: Knn Microwave Devicesmentioning

confidence: 88%

K x Na1−xNbO3 perovskite thin films grown by pulsed laser deposition on R-plane sapphire for tunable microwave devices

et al. 2018

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K x Na 1-x NbO 3 thin films with x = 0.5 and x = 0.7 were deposited by pulsed laser deposition onto R-cut sapphire substrates to be suitable for microwave applications. The 500-800 nm-thick films present a preferential (100) orientation. The ω-scans show a weak mosaicity (full-width-athalf-maximum equal to 0.36° and 0.60° for x = 0.5 and x = 0.7, respectively). In addition to this texture, the in-plane ordering evidenced by X-ray diffraction φ-scan for the (100) orientation is in agreement with an epitaxial-like growth in spite of the high lattice mismatch between K x Na 1-x NbO 3 and sapphire. The dielectric characteristics and the frequency tunability at microwave frequencies were obtained from coplanar waveguide devices (transmission lines and stub resonators). For the K 0.5 Na 0.5 NbO 3 and K 0.7 Na 0.3 NbO 3 compositions, high dielectric permittivity ε r values of 360 and 1 250, and loss tangent tanδ values of 0.36 and 0.43 without biasing were retrieved from the transmission lines measurements at 10 GHz, respectively. Frequency tunabilities of 15 % and 12 % have been assessed under 80 kV/cm biasing from stub resonator measurements for the K 0.5 Na 0.5 NbO 3 and K 0.7 Na 0.3 NbO 3 compositions, respectively. K 0.5 Na 0.5 NbO 3 composition is therefore a promising solution for miniaturized tunable devices at microwave frequencies.

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Section: Knn Microwave Devicesmentioning

confidence: 88%

K x Na1−xNbO3 perovskite thin films grown by pulsed laser deposition on R-plane sapphire for tunable microwave devices

et al. 2018

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“…The final stoichiometry of films is obviously sensitive to the excess amount of potassium in the target, the oxygen pressure, the substrate temperature and the target-substrate distance. Following the results of an optimization study [106], our KTN thin films were grown at 700 C and 30 Pa oxygen pressure on substrates located at 60 mm from a target 50% (molar) enriched in KNO 3 .…”

Section: Control Of Compositionmentioning

confidence: 99%

“…A detailed study of the growth of KTN on various single-crystal substrates (namely R-sapphire, C-sapphire, MgO, and LAO, as well as STO, for comparison only) was reported in [106].…”

Section: Oriented Ktn Filmsmentioning

confidence: 99%

“…Capacitances of the IDC were measured at 1 GHz for KTa 0.6 Nb 0.4 O 3 films grown on various substrates [106], reflecting different orientations and microstructures. ÁC/C was only 1.3% on alumina and reached 7.2% on R-sapphire: this result suggests a key effect of the crystalline ordering, and consequently of the microstructure quality and grain boundary cleanliness, on the improvement of agility.…”

Section: Influence Of the Substratementioning

confidence: 99%

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Epitaxially grown ferroelectric thin films for agile devices

Перрин¹,

Rousseau²,

Fasquelle³

et al. 2008

Phase Transitions

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“…Metal oxynitrides have attracted great attention over the past two decades for their promising applications in many fields, such as visible-light-driven photocatalysts, [1][2][3][4][5][6][7][8][9] high-K dielectrics, [10][11][12][13] ferroelectrics, [14][15][16] colossal magnetoresistive materials, [17][18][19] and environmentally friendly inorganic pigments. [20][21][22][23][24] Metal oxynitrides with perovskite-type structure are of particular interest because the incorporation of nitrogen into the oxidic perovskite crystalline structure leads to multifunctional properties as a result of band gap reduction.…”

Section: Introductionmentioning

confidence: 99%

Preparation of LaTiO₂N Using Hydrothermally Synthesized La₂Ti₂O₇ as a Precursor and Urea as a Nitriding Agent

et al. 2019

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A facile method was successfully developed to prepare perovskite-type metal oxynitrides, LaTiO 2 N, from La 2 Ti 2 O 7 as a precursor in an atmosphere of N 2 . Urea was employed as a solid-state nitriding agent, instead of gaseous NH 3 , to increase the safety of the reaction. The hydrothermally prepared La 2 Ti 2 O 7 precursor had a nanosheet morphology and contained La(OH) 3 as a by-product. Through the optimization of reaction conditions including heat-treatment temperature and content [a]

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Influence of substrate on the pulsed laser deposition growth and microwave behaviour of KTa0.6Nb0.4O3 potassium tantalate niobate ferroelectric thin films

Cited by 25 publications

References 46 publications

K x Na1−xNbO3 perovskite thin films grown by pulsed laser deposition on R-plane sapphire for tunable microwave devices

K x Na1−xNbO3 perovskite thin films grown by pulsed laser deposition on R-plane sapphire for tunable microwave devices

Epitaxially grown ferroelectric thin films for agile devices

Preparation of LaTiO₂N Using Hydrothermally Synthesized La₂Ti₂O₇ as a Precursor and Urea as a Nitriding Agent

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Influence of substrate on the pulsed laser deposition growth and microwave behaviour of KTa0.6Nb0.4O3 potassium tantalate niobate ferroelectric thin films

Cited by 25 publications

References 46 publications

K x Na1−xNbO3 perovskite thin films grown by pulsed laser deposition on R-plane sapphire for tunable microwave devices

K x Na1−xNbO3 perovskite thin films grown by pulsed laser deposition on R-plane sapphire for tunable microwave devices

Epitaxially grown ferroelectric thin films for agile devices

Preparation of LaTiO2N Using Hydrothermally Synthesized La2Ti2O7 as a Precursor and Urea as a Nitriding Agent

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Preparation of LaTiO₂N Using Hydrothermally Synthesized La₂Ti₂O₇ as a Precursor and Urea as a Nitriding Agent