Influence of substrate resistivity on photovoltaic characteristics of Pd‐doped amorphous carbon film/SiO₂/Si heterojunction

Abstract

The Pd‐doped amorphous carbon (a‐C:Pd) film was deposited on n‐Si substrates with a native SiO2 layer to form a‐C:Pd film/SiO2/Si solar cell using a direct current magnetron sputtering method. We studied the effect of Si substrate resistivity on the photovoltaic characteristics of the a‐C:Pd film/SiO2/Si solar cell for the first time and found that the Si substrate resistivity has a marked effect on the photovoltaic characteristics of a‐C:Pd film/SiO2/Si heterojunctions. The heterojunction with n‐Si substrate resistivity of 2–3 Ω cm shows the highest open‐circuit voltage, short‐circuit current density, and conversion efficiency. A reasonable mechanism for the results is presented in this paper.

Edge Effect on the Photodetection Ability of the Graphene Nanocrystallites Embedded Carbon Film Coated on p‐Silicon

“…For example, V. S. Veerasamy reported the photovoltaic behavior and spectral response of n‐type (nitrogen‐doped) tetrahedral amorphous carbon (ta‐C)/p‐type crystalline silicon heterojunction photodiodes . In 2012, Xue et al prepared Pd‐doped amorphous carbon (a‐C) film/SiO 2 /Si heterojunction by sputtering system and tested its substrate resistivity, light‐induced resistance effect and photoconductivity . However, the a‐C film/Si photodetector shows a low responsivity below 0.18 A W −1 .…”

The effect of the native silicon dioxide interfacial layer on photovoltaic characteristics of gold/p-type amorphous boron carbon thin film alloy/silicon dioxide/n-type silicon/aluminum solar cells

“…Therefore, this method was used in this study to fabricate amorphous boron carbon (a-BC) thin film alloy. The deposition of a semiconductor on silicon with a native silicon dioxide (SiO 2 ) layer reportedly improves the photovoltaic characteristics of solar cells in which it is used [2,[19][20][21]. Hence, the effect of a native SiO 2 layer on the photovoltaic characteristics of a-BC/SiO 2 / n-Si solar cells is investigated.…”

Bias-Modulated High Photoelectric Response of Graphene-Nanocrystallite Embedded Carbon Film Coated on n-Silicon

“…The a-C film is the earliest carbon-based material applied in heterojunctions for photoelectric devices with a responsivity of 0.18 A/W [19]. In 2012, Xue et al tested the substrate resistivity [20], light-induced resistance effect [21], and photoconductivity [22] of Pd-doped amorphous carbon film/SiO 2 /Si heterojunctions. The device size of the a-C film photodetector can be as large as a commercial photodetector (~tens of mm 2 ).…”