Influence of substrate temperature on the properties of fluorinated silicon-nitride thin films deposited by IC-RPECVD

Fandiño, J.; López-Suárez, A.; Monroy, B.M.; Santana, G.; Ortíz, A.; Alonso, Juan Carlos; Oliver, A.

doi:10.1007/s11664-006-0148-3

Cited by 4 publications

(3 citation statements)

References 24 publications

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“…The rms roughness calculated for this film is on the order of 0.22 nm, which is an excellent value in reference to the deposition process and for applications in electronic devices. 36 All tantalum oxide and TAO analyzed films have rms roughness values of the same order of magnitude, without features indicating some crystalline structure in agreement with the X-ray diffraction results.…”

Section: G278supporting

confidence: 82%

Ultrasonic Spray Pyrolysis Deposition and Characterization of Tantalum–Aluminum Oxide Thin Films

Rico-Fuentes

Alonso

Santana

et al. 2007

J. Electrochem. Soc.

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Tantalum oxide and tantalum-aluminum oxide films have been prepared by pyrosol using alcoholic start solution of tantalum chloride and aluminum acetylacetonate at substrates temperatures of 250°C. All films are amorphous independent of the deposition conditions. X-ray diffraction shows that aluminum incorporation in deposited materials stabilizes the amorphous phase even after annealing at 525°C and 900°C. Energy dispersive spectroscopy, Rutherford backscattering, refractive index, and FTIR results indicate that the relative chemical composition of the deposited films is about ͓Ta͔ = 20 atom % and ͓O͔ = 80 atom %, probably containing hydroxide or oxohydroxide groups. The concentration of aluminum in films depends on the concentration of aluminum acetylacetonate in start solution with a ratio ͓Al atom % in film͔/͓Al atom % in solution͔ Ϸ0.1. The rms roughness has values of Ͻ1 nm. The effect of incorporation of aluminum in deposited material and its annealing at 525°C on the electrical characteristics of metal-oxide-metal structures increases the breakdown electric field and decreases the current density. The dielectric constant decreases as the aluminum concentration increases and annealing has a densification effect on the TAO films.Tantalum oxide ͑Ta 2 O 5 ͒ has some physical properties that make it an attractive material from different points of view. Because of its relatively high refractive index and wide bandgap ͑4.4 eV͒, it can be used as optical coating, particularly as an antireflecting coating for solar cells and in optical wave guides. 1 Its electrical conductivity is very sensitive to gaseous elements, such as oxygen, nitrogen, and hydrogen. 2,3 Other important applications of tantalum oxide are as a high-temperature resistance material. 4 From an electrical point of view, given the scaling down of integrated circuits trend the use of silicon dioxide ͑SiO 2 ͒ films as the gate dielectric layer with a thickness of 1.5 nm permits large leakage currents, which results in integrated circuits that do not function properly. It is accepted that if a film of a high dielectric constant ͑high-k͒ material is used to replace SiO 2 , the film thickness can be increased, which drastically reduces the leakage current. 5 Because of its high dielectric constant and good dielectric breakdown strength, Ta 2 O 5 thin film is considered a promising candidate for applications in electronic devices, e.g., electroluminescent devices of the metal/insulator/semiconductor/ insulator/metal ͑MISIM͒ type, dynamic random access memories ͑DRAM͒, decoupling capacitors, and as the gate dielectric layer in metal-oxide-semiconductor ͑MOS͒ devices. 6,7 In general, all these devices must have the lowest leakage electrical current; to accomplish this condition, the dielectric layers must be of amorphous nature to avoid the relatively large currents through the grain boundaries measured in crystalline materials. Nevertheless, the tantalum oxide crystallize at a temperature of the order of 600°C, which is a temperature lower than those used i...

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Section: G278supporting

confidence: 82%

Ultrasonic Spray Pyrolysis Deposition and Characterization of Tantalum–Aluminum Oxide Thin Films

Rico-Fuentes

Alonso

Santana

et al. 2007

J. Electrochem. Soc.

Self Cite

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“…Since the relationship between the refractive index and film density of inorganic oxide , and silicon nitride films ,− is often described as linear, we measured the refractive index of the PHPS and PDSN films to evaluate the densification. It is necessary to analyze the nanometer-scale distribution of refractive index in the PDSN films, as this has remained unclear.…”

Section: Resultsmentioning

confidence: 99%

Nanometer-Thick SiN Films as Gas Barrier Coatings Densified by Vacuum UV Irradiation

Sasaki

Sun

Kurosawa

et al. 2021

ACS Appl. Nano Mater.

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Gas barrier films are widely used in electronic and packaging applications. They are also critical components of flexible organic light-emitting diodes (FOLEDs) that require high gas barrier performance. Among the various film manufacturing techniques, solution-processed thin-film encapsulation (TFE) represents a low-cost FOLED fabrication method. The nanometerthick SiN films produced following the vacuum ultraviolet (VUV)-induced densification of solution-processed perhydropolysilazane (PHPS) films in a N 2 atmosphere can potentially serve as TFE barrier films. However, the nanometerthick PHPS densification process has not been examined in sufficient detail. We investigated and discussed the effects of the Si−N bond number, PHPS film composition, and free volume (present in the produced Si−N network) on the VUV-induced PHPS densification process. It was found that VUV irradiation caused rapid hydrogen release and film densification through the formation of Si−N bonds. The results obtained using the X-ray photoelectron spectroscopy and dynamic secondary ion mass spectrometry techniques, and the calculated residual hydrogen ratios, revealed that the film composition was strongly related to the number of residual hydrogen atoms and Si−N bonds. Notably, nanometer-thick PHPS film densification was a relatively slow process, in which the free volume in the Si−N network was considerably reduced by the atomic rearrangement induced by the simultaneous cleavage of several Si−N bonds during VUV irradiation. We believe that the results presented herein can potentially serve as a guideline for developing solution-processed nanometer-thick SiN films with relatively high density and excellent gas barrier performance (that is comparable to that exhibited by vacuum-processed barrier films).

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“…To interpret the trend of the WVTR values from the viewpoint of the densification process, Figure 4a shows the fitting results in the ellipsometry measurement for the PHPS and PDSN layers with different VUV doses. As the refractive indices of inorganic oxide [44,45] and silicon nitride layers [46][47][48][49] are proportional to their layer densities, the densification can be evaluated from the refractive index. The PHPS and PDSN layers were fitted using a single-layer model with a Gaussian oscillator and a four-layer model containing SiO 2 at the surface and three single-layer models, respectively, referring to previous work.…”

Section: Gas-barrier Performance Of Pdsn Layersmentioning

confidence: 99%

Solution‐Processed Gas Barriers with Glass‐Like Ultrahigh Barrier Performance

Sasaki

Sun

Kurosawa

et al. 2022

Adv Materials Inter

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Several electronic devices, such as perovskite solar cells (PSCs) and organic light‐emitting diodes (OLEDs), are very vulnerable to water vapor. Therefore, they require an ultrahigh‐performance gas barrier (water vapor transmission rate [WVTR]: less than 10−5 g m−2 d−1). The barrier performance of solution‐processed gas barriers is inferior to that of vacuum‐processed gas barriers; however, they possess advantages such as high resource efficiency, high throughput, low fabrication cost, and printability, which facilitate sustainable manufacturing and digital fabrication. The simultaneous realization of solution processability and ultrahigh barrier performance is highly desired. Herein, this work reports solution‐processed gas barriers developed using perhydropolysilazane (PHPS)‐derived SiN (PDSN) layers densified by vacuum ultraviolet (VUV) irradiation in a nitrogen atmosphere at room temperature. The appropriate PDSN thickness and irradiated VUV dose result in an excellent WVTR of 4.8 × 10−5 g m−2 d−1 (a barrier performance close to that of glass), which makes it among the best‐performing water vapor barriers recorded to date. The barrier performance is achieved with a thickness of only 990 nm and a short VUV irradiation time (2.4 min per PHPS layer). An ultrahigh‐performance barrier with rapid processability such as this expands the possibility of solution‐processed barrier technology.

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Influence of substrate temperature on the properties of fluorinated silicon-nitride thin films deposited by IC-RPECVD

Cited by 4 publications

References 24 publications

Ultrasonic Spray Pyrolysis Deposition and Characterization of Tantalum–Aluminum Oxide Thin Films

Ultrasonic Spray Pyrolysis Deposition and Characterization of Tantalum–Aluminum Oxide Thin Films

Nanometer-Thick SiN Films as Gas Barrier Coatings Densified by Vacuum UV Irradiation

Solution‐Processed Gas Barriers with Glass‐Like Ultrahigh Barrier Performance

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