Influence of substrate tilting angle on graphene production through atmospheric pressure chemical vapor deposition

Abstract

An experimental and simulation study of substrate tilting angle in graphene production is presented by applying atmospheric pressure chemical vapor deposition (APCVD). The graphene is produced using APCVD for 8°, 15°, and 60° substrate tilting angles. The Raman characterization was done on all the substrates to see the effect of the substrate tilting angle on the graphene produced. To further understand the result, the heating chamber of the CVD chamber was modeled by using ANSYS® FLUENT. Simulation for the three titling angles was performed using the model. The experimental results showed that the best result was graphene produced by tilting an angle at 15°. The graphene produced has the lowest quality at a 60° tilting angle. This indicates an optimum tilting angle at a lower tilting angle. The simulation revealed the relationship between vorticity and boundary layer thickness to the graphene quality.