Influence of substrate type on the structural, optical and electrical properties of CdxZn1−xS MSM thin films prepared by Spray Pyrolysis method

Thahab, S. M.; Alkhayatt, Adel H. Omran; Saleh, Salah M.

doi:10.1016/j.mssp.2014.04.005

Cited by 14 publications

(3 citation statements)

References 5 publications

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“…It is well known that the nature of the substrate influences the surface texture of spray deposited films. [63][64][65] This behaviour can be attributed to the difference in surface energy and thermal properties for each substrate. As stated before, the heat conductivity of the substrate and the deposited material influences the morphology of the sprayed Zn 1Àx Mg x O.…”

Section: Zn 1àx Mg X O Deposited On Tco Substratesmentioning

confidence: 99%

Influence of the aqueous solution composition on the morphology of Zn_1−xMg_xO films deposited by spray pyrolysis

et al. 2019

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Section: Zn 1àx Mg X O Deposited On Tco Substratesmentioning

confidence: 99%

Influence of the aqueous solution composition on the morphology of Zn_1−xMg_xO films deposited by spray pyrolysis

et al. 2019

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“…There are numerous reports on the electrical and optical properties influenced by Zn substitution in CdZnS material. [14][15][16][17][18] The increasing of Zn composition in Cd 1−x Zn x S will enlarge the band gap, therefore, Cd 1−x Zn x S should lead to an increase of quantum efficiency (QE) in the shorter wavelength regime and also lead to favorable conduction band offset with CZTS. In this paper, we study the effects of Zn composition on the photovoltaic performance by calculating the band offsets for CdZnS/CZTS heterointerface with different Zn compositions.…”

Section: Introductionmentioning

confidence: 99%

Band offsets engineering at Cd _x Zn _{1−
x} S/Cu ₂ ZnSnS ₄ heterointerface

2016

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Cd 1−x Zn x S/Cu 2 ZnSnS 4 (CZTS)-based thin film solar cells usually use CdS as a buffer layer, but due to its smaller band gap (2.4 eV), CdS film has been replaced with higher band gap materials. The cadmium zinc sulfide (CdZnS) ternary compound has a higher band gap than other compounds, which leads to a decrease in window absorption loss. In this paper, the band offsets at Cd 1−x Zn x S/Cu 2 ZnSnS 4 (CZTS) heterointerface are calculated by the first-principles, densityfunctional and pseudopotential method. The band offsets at Cd 1−x Zn x S/CZTS heterointerface are tuned by controlling the composition of Zn in Cd 1−x Zn x S alloy, the calculated valence band offsets are small, which is consistent with the commonanion rule. The favorable heterointerface of type-I with a moderate barrier height (< 0.3 eV) can be obtained by controlling the composition of Zn in Cd 1−x Zn x S alloy between 0.25 and 0.375.

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“…The rapid increase in the resistivity/energy gap of Cd1-xZnxS were increases with increase in doping concentration, which leads to more usage of conductivity related applications like near infrared solar cells. So it is interesting to prepare samples of higher energy gap with reasonably good electrical conductivity [5][6][7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Structural and Electrical Conductivity Studies of Mg Doped Cd0.8Zn0.2S Semiconductor Compounds by Co-precipitation Method

Vijaya¹,

Rao²,

Nagabhushanam³

et al. 2016

IJERT

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The bulk Cd0.8Zn0.2S semiconductor compounds doped with different amounts of magnesium(Mg) have been synthesized by controlled co-precipitation method from aqueous solution containing cadmium acetate, zinc acetate and thiourea at 0.02 mol% of Mgx(x=0~50ml). The solution mixture was made alkaline by adding 25% of liquid ammonia. The structural and electrical conductivity properties of Cd0.8Zn0.2S:Mg samples have been studied using X-Ray Diffraction (XRD) and Electrical Conductivity Studies. The samples have polycrystalline nature with hexagonal structure observed in the XRD studies. The average crystalline size varied from 30 to 47 nm and also calculated lattice parameters. The low temperature electrical conductivity measurements of Cd0.8Zn0.2S: Mg compounds were studied in the range of 77-300K by Keithley electrometer. It is observed that the increase in Mg doping concentration will increases the electrical conductivity. The values of activation energy were estimated for all the samples and found that the maximum activation energy at lower temperature range is 69.27 meV.

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Influence of substrate type on the structural, optical and electrical properties of CdxZn1−xS MSM thin films prepared by Spray Pyrolysis method

Cited by 14 publications

References 5 publications

Influence of the aqueous solution composition on the morphology of Zn_1−xMg_xO films deposited by spray pyrolysis

Influence of the aqueous solution composition on the morphology of Zn_1−xMg_xO films deposited by spray pyrolysis

Band offsets engineering at Cd _x Zn _{1−
x} S/Cu ₂ ZnSnS ₄ heterointerface

Structural and Electrical Conductivity Studies of Mg Doped Cd0.8Zn0.2S Semiconductor Compounds by Co-precipitation Method

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Influence of substrate type on the structural, optical and electrical properties of CdxZn1−xS MSM thin films prepared by Spray Pyrolysis method

Cited by 14 publications

References 5 publications

Influence of the aqueous solution composition on the morphology of Zn1−xMgxO films deposited by spray pyrolysis

Influence of the aqueous solution composition on the morphology of Zn1−xMgxO films deposited by spray pyrolysis

Band offsets engineering at Cd x Zn 1− x S/Cu 2 ZnSnS 4 heterointerface

Structural and Electrical Conductivity Studies of Mg Doped Cd0.8Zn0.2S Semiconductor Compounds by Co-precipitation Method

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Influence of the aqueous solution composition on the morphology of Zn_1−xMg_xO films deposited by spray pyrolysis

Influence of the aqueous solution composition on the morphology of Zn_1−xMg_xO films deposited by spray pyrolysis

Band offsets engineering at Cd _x Zn _{1−
x} S/Cu ₂ ZnSnS ₄ heterointerface