Influence of surface null potential on nonvolatile bistable resistive switching memory behavior of dilutely aluminum doped ZnO thin film

Abstract

We report a correlation between surface null potential and bistable resistive switching effect in dilutely Al-doped ZnO nearly transparent thin film. The nearly symmetrical bistable resistive switching was observed at low operating potential (±1 V) with good repeatability and stability, driven by surface null potential. We report that above null potential, oxygen vacancies in the proximity of aluminum provide systematic development of conducting paths. While, the switching effect was also observed to be dopant driven in the proximity to ±1 V. The phenomenon was explained using migration of Al3+ in ZnO matrix, which dominates over oxygen vacancies.

Tunable multiferroic and bistable/complementary resistive switching properties of dilutely Li-doped BiFeO3 nanoparticles: an effect of aliovalent substitution

“…The observed resistive switching behavior of the undoped and doped BiFeO 3 nanoparticles sandwiched in the two electrodes is attributed to the oxygen vacancy mediated lamentary conduction phenomenon. In the present case, the possible ways of formation of oxygen vacancies and defects are (i) the defects observed at the particle boundary, which gave rise to a coreshell-like structure could take part in the oxygen vacancy mediated lamentary conduction; [42][43][44][45]75 (ii) the partial oxidation of electrode surfaces during the electroforming process, which are in contact with BFO, could develop an interface insulating layer (IIL), which can introduce oxygen related defects in BFO. The IIL formation within the device is evident from the exponential nature of the resistive cycle 77 and (iii) the local Joule heating effect in the device during the electroforming process.…”

“…In most cases, the process or the feature observed at high bias condition (here AE0.5 V) can be either attributed to electromigration of dopant ions or a Joule heating effect. 42,43,75 The CRS process was observed to be stable for 50 consecutive cycles. The observed four-level switching process nature is analogous to the reported anti-serially stacked CRSs.…”

Room temperature threshold switching behaviors of Bi0.9Nd0.1Fe1−xCoxO3 nanoparticles

“…34,35 So when the applied electric field increases up to the threshold voltage (V TH ), the conductive paths are formed and the current flow concentrates in these paths where a sudden transition from a high-resistance state (OFF state) to a low-resistance state (ON state) is observed in the J-V characteristics, eventually leading to TS. The electrons and positively charged oxygen vacancies occupy trap states below the Fermi level.…”

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

“…Nevertheless, controlled deposition parameter and post-thermal treatment on resistive layer may be not as effective as doping technique to fully adjust the defect concentration. Various dopant elements, such as Al [ 137 , 175 , 176 ], B [ 177 ], Co [ 138 , 139 , 169 , 178 ], Cr [ 110 , 158 ], Cu [ 87 , 140 , 179 ], Fe [ 180 , 181 ], Ga [ 112 , 182 , 183 ], La [ 144 ], Li [ 184 , 185 ], Mg [ 55 , 111 , 145 , 186 – 190 ], Mn [ 91 , 146 – 148 , 191 – 195 ], N [ 56 , 149 ], Ni [ 196 ], S [ 197 ], Sn [ 90 , 198 ], Ta [ 199 ], Ti [ 150 , 151 ], V [ 85 ], and Zr [ 86 ], that have been reported may exhibit decent switching performance. ZnO-based RRAM with multi-element doping, such as Al-Sn [ 136 , 200 ], Ga-Sn [ 201 ], and In-Ga [ 141 – 143 , 202 – 208 ], is also proposed.…”