Influence of surface roughness on the optical mode profile in GaN-based violet ridge waveguide laser diodes

Holc, Katarzyna; Jakob, Annik; Weig, Thomas; Köhler, K.; Ambacher, O.; Schwarz, Ulrich

doi:10.1117/12.2037336

Cited by 2 publications

(2 citation statements)

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“…6,7 Furthermore, it has been proposed that the single mode is stabilized by longitudinal mode competition caused by optical gain saturation. Similarly, we observe a surface topology of the order of ∼10 nm in height and a periodicity of 100 nm (see Fig.…”

Section: Resultsmentioning

confidence: 99%

AlGaInN laser diode technology for GHz high-speed visible light communication through plastic optical fiber and water

et al. 2016

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Abstract. AlGaInN ridge waveguide laser diodes are fabricated to achieve single-mode operation with optical powers up to 100 mW at ∼420 nm for visible free-space, underwater, and plastic optical fiber communication. We report high-frequency operation of AlGaInN laser diodes with data transmission up to 2.5 GHz for free-space and underwater communication and up to 1.38 GHz through 10 m of plastic optical fiber.

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Section: Resultsmentioning

confidence: 99%

AlGaInN laser diode technology for GHz high-speed visible light communication through plastic optical fiber and water

et al. 2016

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“…The final configuration was accomplished by optimizing the system based on an ellipsoidal mirror with respect to diffraction limited focusing capability and highest transmission efficiency without using any anti-reflection (AR) coating. In particular spherical aberration is compensated by coupling the excitation beam into the substrate through an appropriately shaped surface [9,10]. Except for minimal field aberrations the beam quality is maintained, and the highest possible energy density at the NWHs for the given focusing NA is achieved by this means.…”

Section: A Optical Design Of the Excitation Systemmentioning

confidence: 99%

Integration of an opto-chemical detector based on group III-nitride nanowire heterostructures

et al. 2015

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The photoluminescence intensity of group III nitrides, nanowires, and heterostructures (NWHs) strongly depends on the environmental H(2) and O(2) concentration. We used this opto-chemical transducer principle for the realization of a gas detector. To make this technology prospectively available to commercial gas-monitoring applications, a large-scale laboratory setup was miniaturized. To this end the gas-sensitive NWHs were integrated with electro-optical components for optical addressing and read out within a compact and robust sensor system. This paper covers the entire realization process of the device from its conceptual draft and optical design to its fabrication and assembly. The applied approaches are verified with intermediate results of profilometric characterizations and optical performance measurements of subsystems. Finally the gas-sensing capabilities of the integrated detector are experimentally proven and optimized.

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Influence of surface roughness on the optical mode profile in GaN-based violet ridge waveguide laser diodes

Cited by 2 publications

References 10 publications

AlGaInN laser diode technology for GHz high-speed visible light communication through plastic optical fiber and water

AlGaInN laser diode technology for GHz high-speed visible light communication through plastic optical fiber and water

Integration of an opto-chemical detector based on group III-nitride nanowire heterostructures

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