Influence of surfactant and salts on chemical mechanical planarisation of copper

Bernard, Pierre; Kapsa, Ph.; Coudé, T.; Abry, Jean‐Christophe

doi:10.1016/j.wear.2005.02.093

Cited by 27 publications

(22 citation statements)

References 3 publications

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“…In fact, according to the recent results of Bernard et al, surfactants (and their associated lubrication effects) may actually help to minimize the generation of defect sites in CMP of Cu. 68 Currently we are testing the effectiveness of ADS as an inhibitor in low down-pressure (ഛ2 psi) planarization of Cu (for potential applications in systems containing porous low-permittivity dielectric materials).…”

Section: G Possible Effects Of Surfactants On Surface Abrasion and Pmentioning

confidence: 99%

Utility of dodecyl sulfate surfactants as dissolution inhibitors in chemical mechanical planarization of copper

et al. 2005

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An important component of the slurries used in chemical mechanical planarization (CMP) is an appropriately chosen corrosion/dissolution inhibitor, which facilitates selective material removal from protrusions while protecting recessed regions of the surface. The present work demonstrates the utility of two environmentally benign anionic surfactants, sodium dodecyl sulfate (SDS) and ammonium dodecyl sulfate (ADS) as dissolution inhibitors. Using a standard slurry (1 wt% glycine with 5 wt% H 2 O 2 at pH ‫ס‬ 4.0) typically used for Cu CMP and combining measurements of open circuit potentials and contact angles with those of Cu removal rates, we show that both SDS and ADS suppress chemical dissolution and polish rates of Cu. The dissolution inhibition efficiencies of ADS and SDS measured in these experiments are found to be superior to those of benzotriazole (BTA), a traditional inhibiting agent used for copper CMP.

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Section: G Possible Effects Of Surfactants On Surface Abrasion and Pmentioning

confidence: 99%

Utility of dodecyl sulfate surfactants as dissolution inhibitors in chemical mechanical planarization of copper

et al. 2005

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“…It was not chemical but mechanical action which played a dominant role in the copper removal process. 22 The removed material was not passivated layers, but the material underneath, resulting in defects on surface, 22 as shown in Fig. 3d.…”

Section: Resultsmentioning

confidence: 99%

Performance of Sodium Dodecyl Sulfate in Slurry with Glycine and Hydrogen Peroxide for Copper-Chemical Mechanical Polishing

Pan¹,

Lu²,

Pan³

et al. 2010

J. Electrochem. Soc.

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The performance of sodium dodecyl sulfate ͑SDS͒, an anion surfactant, in a slurry with glycine and hydrogen peroxide ͑H 2 O 2 ͒ for copper-chemical mechanical polishing ͑Cu-CMP͒ was studied. The wettability and surface tension of the slurry for copper and the zeta potential of SiO 2 were examined. The influence of SDS on the static corrosion, material removal rate, and the surface roughness was studied. The results showed that SDS improved Cu-CMP performance by changing the physical characteristics of the slurry and protecting the copper surface from corrosion and scratches. A surface with the lowest amount of scratches and corrosion after polishing was obtained when concentration of the SDS surfactant was 0.78 mM/l in the glycine-H 2 O 2 solution. The mechanism of action between the SDS and copper surface was investigated by electrochemical polarization and X-ray photoelectron spectroscopy. Finally, a physical model was developed to describe the interactions between SiO 2 particles, the copper surface, and SDS in the slurry.In order to achieve higher performance of microelectronic devices, the planarization of copper interconnect lines is very important. 1 Chemical mechanical polishing ͑CMP͒ has proven to be a very profitable method in the IC manufacturing industry. [2][3][4] In the CMP process, the polishing slurry is a critical factor in determining the quality of the polished surface. The slurry provides both chemical and mechanical actions to the wafer planarization. Abrasive particles in the slurry play a role in removing the copper mechanically and taking away abraded copper from the surface. 5 Chemical components such as oxidizing agents, 2,6 complexing agents, 3,4,7 corrosion inhibitors, 8-11 surfactants, 12-14 and pH buffering agents are the essential components of ideal slurries. Hydrogen peroxide ͑H 2 O 2 ͒ and glycine are widely used as an oxidizer and complexing agent in the CMP slurry, respectively, 15 and benzotriazole ͑BTA͒ has been used as the most common inhibitor. 10,15,16 During the copper-chemical mechanical polishing ͑Cu-CMP͒, physical properties of the slurry, such as surface tension, dispersion and suspension stability of abrasives, interaction between the particles and the polished surface, and the rheological characteristics, affect the planarization efficiency dramatically. Surfactant is added to the slurry to avoid the agglomeration of particles which would result in scratches and other defects on the surface. 17,18 Selecting a high-performance surfactant is of great importance to the CMP process. 13 There is some literature about particles dispersion and slurry stability. The synergistic effects of a mixed surfactant system were carried out by Shah. 19 A proper concentration of anion surfactant sodium dodecyl benzene sulfonate and nonionic surfactant polyethylene glycol 4000 can make CeO 2 -coated SiO 2 nanoparticle suspension stable, that is, without sedimentation. 20 The effects of several different nonionic surfactants on the performance of copper-CMP were studied by Tsai et al. 2...

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“…The recently developed multilayered PCB structure needs a supplementary copper planarization process due to its higher integration. In the microelectronic industry, the chemical mechanical polishing (CMP) process is widely adopted to polish the overgrown Cu layer, in which various slurries, abrasives, and additives are used [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. Recently, some problems and limitations of this process have been reported, such as scratches, stress cracking, and corrosion of the copper, which are commonly caused by abrasives and additives in the slurries [1,5,9,11,17,20].…”

Section: Introductionmentioning

confidence: 99%

Study on electrochemical mechanical polishing process of copper circuit on PCB

Kulyk

et al. 2010

Korean J. Chem. Eng.

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As an alternative to conventional chemical mechanical polishing (CMP) for the planarization of copper layers on electronic circuits, the electrochemical mechanical polishing (ECMP) process in alkali-based solution was investigated in this work. The influence of the polishing pad materials on the polishing process was studied, and the hard polyurethane polishing pad was shown to eliminate the "dishing effect". The polishing conditions, such as the pad rotating speed, concentration of H 2 O 2 , and the amount of BTA additives were optimized to control the planarization performance. As a result, good planarization uniformity was obtained not only in small scale (30 µm) trenches but also in very large scale (a few mm) patterns with a single step ECMP process.

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Influence of surfactant and salts on chemical mechanical planarisation of copper

Cited by 27 publications

References 3 publications

Utility of dodecyl sulfate surfactants as dissolution inhibitors in chemical mechanical planarization of copper

Utility of dodecyl sulfate surfactants as dissolution inhibitors in chemical mechanical planarization of copper

Performance of Sodium Dodecyl Sulfate in Slurry with Glycine and Hydrogen Peroxide for Copper-Chemical Mechanical Polishing

Study on electrochemical mechanical polishing process of copper circuit on PCB

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