Influence of tantalum's crystal phase growth on the microstructural, electrical and mechanical properties of sputter-deposited tantalum thin film layer

Latif, Rhonira; Jaafar, Muhammad Fahmi; Aziz, Mohd Faizal; Zain, Ahmad Rifqi Md; Yunas, Jumril; Majlis, Burhanuddin Yeop

doi:10.1016/j.ijrmhm.2020.105314

Cited by 15 publications

(7 citation statements)

References 40 publications

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“…Radio frequency (RF) magnetron sputtering technique can be used to grow nanolayer of thin film piezoelectric oxides or nitrides at low temperature [ 55 ]. During the sputtering process, the device temperature will generally increase a little (~60 °C) due to plasma heating [ 56 ]. Therefore, ZnO and AlN can be grown at low temperature and are suitable to be integrated with flexible polymeric substrate and other low temperature CMOS processes.…”

Section: Energy Harvester For Totally Implanted Hearing Device Systemmentioning

confidence: 99%

Mechanical Energy Sensing and Harvesting in Micromachined Polymer-Based Piezoelectric Transducers for Fully Implanted Hearing Systems: A Review

et al. 2021

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The paper presents a comprehensive review of mechanical energy harvesters and microphone sensors for totally implanted hearing systems. The studies on hearing mechanisms, hearing losses and hearing solutions are first introduced to bring to light the necessity of creating and integrating the in vivo energy harvester and implantable microphone into a single chip. The in vivo energy harvester can continuously harness energy from the biomechanical motion of the internal organs. The implantable microphone executes mechanoelectrical transduction, and an array of such structures can filter sound frequency directly without an analogue-to-digital converter. The revision of the available transduction mechanisms, device configuration structures and piezoelectric material characteristics reveals the advantage of adopting the polymer-based piezoelectric transducers. A dual function of sensing the sound signal and simultaneously harvesting vibration energy to power up its system can be attained from a single transducer. Advanced process technology incorporates polymers into piezoelectric materials, initiating the invention of a self-powered and flexible transducer that is compatible with the human body, magnetic resonance imaging system (MRI) and the standard complementary metal-oxide-semiconductor (CMOS) processes. The polymer-based piezoelectric is a promising material that satisfies many of the requirements for obtaining high performance implantable microphones and in vivo piezoelectric energy harvesters.

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Section: Energy Harvester For Totally Implanted Hearing Device Systemmentioning

confidence: 99%

Mechanical Energy Sensing and Harvesting in Micromachined Polymer-Based Piezoelectric Transducers for Fully Implanted Hearing Systems: A Review

et al. 2021

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“…The obtainment of α-Ta film which is easily formed at high temperature deposited on Si substrate without inner-diffusion interface is very limited, partially because of the obstacle that Ta is highly reactive to the heating Si substrate 15 – 17 . Although it has been reported that the α-Ta film is deposited on Si substrate at RT successfully by using several strategies such as optimizing the sputtering conditions and adding under layers 18 – 30 . In comparison to high-temperature growth, these films are more likely to have smaller grain sizes, more grain boundaries, and more surface defects as a result of RT deposition 18 – 22 , which might lead to an additional dielectric loss in the superconducting quantum device 8 , 12 – 14 , 31 – 33 .…”

Section: Introductionmentioning

confidence: 99%

“…Although it has been reported that the α-Ta film is deposited on Si substrate at RT successfully by using several strategies such as optimizing the sputtering conditions and adding under layers 18 – 30 . In comparison to high-temperature growth, these films are more likely to have smaller grain sizes, more grain boundaries, and more surface defects as a result of RT deposition 18 – 22 , which might lead to an additional dielectric loss in the superconducting quantum device 8 , 12 – 14 , 31 – 33 . Besides, in these studies, the Ta-Si interface may include thicker non-superconducting underlayers 25 , 27 or metal silicides 15 – 17 which might form because of heating treatments used during the device fabrication flow.…”

Section: Introductionmentioning

confidence: 99%

High-quality superconducting α-Ta film sputtered on the heated silicon substrate

Wu¹,

Ding²,

Xiong

et al. 2023

Sci Rep

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Intrigued by the discovery of the long lifetime in the α-Ta/Al2O3-based Transmon qubit, researchers recently found α-Ta film is a promising platform for fabricating multi-qubits with long coherence time. To meet the requirements for integrating superconducting quantum circuits, the ideal method is to grow α-Ta film on a silicon substrate compatible with industrial manufacturing. Here we report the α-Ta film sputter-grown on Si (100) with a low-loss superconducting TiNx buffer layer. The α-Ta film with a large growth temperature window has a good crystalline character. The superconducting critical transition temperature (Tc) and residual resistivity ratio (RRR) in the α-Ta film grown at 500 °C are higher than that in the α-Ta film grown at room temperature (RT). These results provide crucial experimental clues toward understanding the connection between the superconductivity and the materials' properties in the α-Ta film and open a new route for producing a high-quality α-Ta film on silicon substrate for future industrial superconducting quantum computers.

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“…The coexistence of α and β phases in films also limited their usability. [3][4][5] Therefore, deposition pure α-Ta films is critical for the studies of associated films properties. Due to the lower hardness of pure α phase deposited under different preparation methods and deposition conditions, it is necessary to focus on seeking suitable deposition conditions to obtain fine grain and higher hardness of α-Ta films.…”

Section: Introductionmentioning

confidence: 99%

Structure, phase evolution and properties of Ta films deposited using hybrid high-power pulsed and DC magnetron co-sputtering

Huang¹,

He²,

Yi³

2022

Chinese Phys. B

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Crystalline phase and microstructure control are critical for obtaining desired properties of Ta films deposited by magnetron sputtering. Structure, phase evolution, and properties of Ta films deposited by using hybrid high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) under different fractions of DCMS power where Ta ion to Ta neutral ratios of the deposition flux were changed are investigated. The results revealed that the number of Ta ions arriving on the substrate/growing film play an important role in structure and phase evolution of Ta films. It can effectively avoid the unstable arc discharge under low pressure and show a higher deposition rate by hybrid high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) compared with only high power impulse magnetron sputtering (HiPIMS). Meanwhile, the high hardness α-Ta films can be directly deposited by hybrid co-sputtering compared to those prepared by direct current magnetron sputtering (DCMS). In the co-sputtering technology, pure α-Ta phase film with extremely fine, dense and uniform crystal grains were obtained, which shows smooth surface roughness (3.22 nm), low resistivity (38.98 μΩ·cm) and abnormal high hardness (17.64 GPa).

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Influence of tantalum's crystal phase growth on the microstructural, electrical and mechanical properties of sputter-deposited tantalum thin film layer

Cited by 15 publications

References 40 publications

Mechanical Energy Sensing and Harvesting in Micromachined Polymer-Based Piezoelectric Transducers for Fully Implanted Hearing Systems: A Review

Mechanical Energy Sensing and Harvesting in Micromachined Polymer-Based Piezoelectric Transducers for Fully Implanted Hearing Systems: A Review

High-quality superconducting α-Ta film sputtered on the heated silicon substrate

Structure, phase evolution and properties of Ta films deposited using hybrid high-power pulsed and DC magnetron co-sputtering

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