Influence of tellurium content and chlorine concentration on carrier drift mobility of Se _100–x Te _x :Cl glasses

Abstract

Carrier drift mobility in undoped and doped with chlorine Se 100-x Te x (0 ≤ x ≤ 10) glassy alloys has been investigated as a function of Te content and Cl concentration. It was found that the drift mobilities of both electrons and holes were decreased with Te content increasing. The dependence of the carriers drift mobilities on Cl concentration followed a complicated behavior and was resulted in rapid decrease of the hole mobility when chlorine concentration approached 0.1 at.%. The concentrations and energies of localized states controlling the charge transport in the material have been found depending on Te content and Cl concentration. The observed charge-transport features are considered to attribute to changes in the concentrations of intrinsic charged defects and explained in terms of VAP model.