Eng. Res. Express
 2020
DOI: 10.1088/2631-8695/abc52b
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Influence of temperature and dimension in a 4H-SiC vertical power MOSFET

Mustafa H. Alqaysi
1
,
Antonio Martı́nez
2
,
Brendan Ubochi
3
et al.

Abstract: Influence of temperature and dimension in a 4H-SiC vertical power MOSFETTo cite this article: M H Alqaysi et al 2020 Eng. Res. Express 2 045020 View the article online for updates and enhancements.

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