Influence of temperature and illumination intensity on the InP/CdS hetero-photocells characteristics

Радауцан, С. И.; Russu, E. V.; Kohanyuk, M.B.; Strebkov, D. S.; Gorchiak, L.V.; Kitoroaga, A. D.

doi:10.1016/0165-1633(84)90051-0

Cited by 4 publications

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“…3 and 4 that the increase of the fill factor (FF = I m V m /I sc V oc ) is due to the decrease of the open-circuit voltage (V oc ) and the fall-off of the series resistance at higher temperatures. The increase of the short-circuit current density up to 125 × 10 −5 A · cm −2 at 343 K is a result of the carrier diffusion length increase at higher temperatures and also a result of the absorption edge shift to the lower energies caused by the E g decrease [12]. As a whole we can conclude that the increase of the fill factor and the short-circuit current density is the contributory effect for the decrease of the open-circuit voltage (V oc ) due to the decrease of the voltage temperature coefficient K T (V oc ) and the fall-off of the series resistance at higher temperatures.…”

Section: Resultsmentioning

confidence: 98%

“…The peak in the fill factors is seen to be 45.76 % at a temperature of 343 K. Exactly the same is the case for the short-circuit current density versus temperature curves. It is found that the open-circuit voltage (V oc ) of the junction Sn/(n)ZnO exhibits a linear decrease with the temperature rise and with a decrease of the voltage temperature coefficient, K T (V oc ), using the expression[12]…”

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confidence: 99%

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Thermal and Doping Effect on Sn/(n)ZnO Schottky Junction and Its Performance as a PV Effect

Wary

Rahman

2009

Int J Thermophys

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Thin film Sn/(n)ZnO Schottky junctions with different doping concentrations were prepared by vacuum evaporation. Different junction parameters such as ideality factor, barrier height, Richardson's constant, short-circuit current, etc. were determined from I-V characteristics. These parameters were found to change significantly with variations of doping concentration and temperature. The structures showed the change of the PV effect, giving a fill factor of 0.42 (efficiency of 0.39 %) with an open-circuit voltage of 124 mV and a short-circuit current density of 113×10 −5 A · cm −2 for a doping concentration, N d = 3.88 × 10 15 cm −3 (2.74 % Al-doped ZnO). However, by increasing the doping concentration, the efficiency was found to increase by up to 4.54 % for doping concentration, N d = 2.28 × 10 17 cm −3 . The conversion efficiencies varied with temperature and were observed to have an overall improvement up to 343 K. Proper doping, annealing, and hydrogenation are necessary to reduce the series resistance so as to achieve an ideal and high efficiency PV converter.

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Section: Resultsmentioning

confidence: 98%

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confidence: 99%