2019
DOI: 10.3103/s0003701x19030022
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Influence of Temperature on the Output Parameters of a Photovoltaic Module Based on Amorphous Hydrogenated Silicon

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Cited by 8 publications
(3 citation statements)
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“…The intrinsic carrier concentration number also depends on the state conduction and valence band densities and the semiconductor energy band-gap (E g ) [44]. Therefore, as discussed by [45] [46], saturation current density can be derived as…”
Section: Dependence Of the Saturation Current On Temperaturementioning
confidence: 99%
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“…The intrinsic carrier concentration number also depends on the state conduction and valence band densities and the semiconductor energy band-gap (E g ) [44]. Therefore, as discussed by [45] [46], saturation current density can be derived as…”
Section: Dependence Of the Saturation Current On Temperaturementioning
confidence: 99%
“…All the five parameters in Table 2 for Solinc 120 W and KC200GT modules that have been deduced using the new simplified simulation procedure are applied in solving Equation (46) to obtain a good approximation of the output current.…”
Section: Analysis Of Different Approaches For Extracting Five-model Pmentioning
confidence: 99%
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