Influence of Termination Isolation Deep-Oxide Trenches on Short-Circuit Capability in Silicon-On-Insulator Lateral IGBT

Ma, Jun; Gu, Yong; Zhang, Long; Luo, Min; Pan, Chengwu; Liu, Siyang; Sun, Weifeng; Zhu, Jun‐Jie; He, Nailong; Zhang, Sen

doi:10.1109/ted.2022.3195481

IEEE Trans. Electron Devices

2022

DOI: 10.1109/ted.2022.3195481

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Influence of Termination Isolation Deep-Oxide Trenches on Short-Circuit Capability in Silicon-On-Insulator Lateral IGBT

Jun Ma

Yong Gu

Long Zhang

et al.

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Influence of Termination Isolation Deep-Oxide Trenches on Short-Circuit Capability in Silicon-On-Insulator Lateral IGBT

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References 22 publications

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