Influence of the composition fluctuation and the disorder on the bowing band gap in semiconductor materials

Fredj, A. Ben; Debbichi, M.; Saïd, M.

doi:10.1016/j.mejo.2007.07.002

Cited by 27 publications

(19 citation statements)

References 80 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The necessary input comes from the structure of the material and the atomic form factors, which are obtained from fitting the experimental bandgap. The form factors for BeTe [21] and ZnTe [22] were further optimized to get the better fit with the recent experimental bandgaps. The re-optimized form factors are used to generate the crystal potential.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Electronic structure of BeTe and ZnTe

Joshi

Pandya²,

Kothari

et al. 2009

Physica Status Solidi (b)

View full text Add to dashboard Cite

The empirical pseudopotential method has been applied to study electronic band structures of BeTe and ZnTe. The band‐structure calculations are performed to study the electron momentum density distribution also in the two semiconductors. The electron momentum distribution is studied in terms of Compton profiles computed along [100], [110], [111], [210], [211] and the [221] directions. The autocorrelation functions have also been computed along the principal crystallographic directions. The band‐by‐band decomposition of autocorrelation functions and the directional Compton profiles are presented. The results are interpreted in terms of band structure. The spherically averaged Compton profile of ZnTe is compared with the available experimental data. On the basis of theoretical anisotropies in the Compton profiles and autocorrelations, bands, bonds and momentum density build up in BeTe and ZnTe semiconductors are discussed. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

mentioning

confidence: 99%

“…To determine the B(z) functions, and thereby the Compton profiles, the potential parameters of BeTe [21] and ZnTe [22] were reoptimized. To compute the k-summation within the Brillouin zone, the special points scheme of Chadi and Cohen [24] was employed that gives accurate results due to the large number of grid points.…”

mentioning

confidence: 99%

Electronic structure of BeTe and ZnTe

Joshi

Pandya²,

Kothari

et al. 2009

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…Although the MN V for InGaNP has an even larger variation than that for InGaNAs, MN V for InGaNP is still larger than that for InGaNAs in the whole content range, which shows that the band gap bowing of InGaNP is stronger than that of InGaNAs. The bowing coefficients for the band gap energy of InGaAs and InGaP are 0.477 and 0.65, respectively [11,12]. Compared with the band bowing for InGaNAs and InGaNP, they have the same trend.…”

Section: Resultsmentioning

confidence: 91%

The parameters in the band-anticrossing model for In x Ga1−x N y P1−y before and after annealing

Zhao

Zhang

Liu

et al. 2011

Sci. China Phys. Mech. Astron.

View full text Add to dashboard Cite

We investigate the parameters in the band-anticrossing (BAC) model for GaNP and InGaPN in this work. The parameters in the BAC model for GaNP and InGaNP are obtained by fitting experimental data. It is found that the band gap bowing of InGaNP is stronger than that of InGaNAs. The effects of annealing on the parameters in the BAC model for InGaNP are also discussed in this work. In addition, the origins for improving luminescence efficiency by annealing are explained. It is relative to the forming of more In-N clusters. InGaNP, band gap bowing, annealingPACS: 78.20.Bh III-V dilute nitride semiconductors have attracted much attention due to their potential applications in microelectronic and optoelectronic devices. Among the newest members of the dilute nitrides family, In x Ga 1x N y P 1y has been suggested as a material for GaInP/GaAs based Heterojunction Bipolar Transistors (HBTs). We know that the incorporation of a small amount of nitrogen in GaN and InGaAs can lead to huge band gap bowing [1]. It has been found that incorporating nitrogen into GaP and InGaP has a similar effect [2][3][4]. Shan et al.[1] successfully used the bandanticrossing (BAC) model to describe the dependence of the band gap energy of InGaNAs on its composition. The BAC model can be also used to describe the dependence of the band gap energy of GaPN and InGaNP on their compositions [2][3][4]. For GaNP, the parameters in the BAC model have been given by several groups [3-4], but the difference of their results is obvious. For InGaNP, as far as we know, the parameters in the BAC model needed to be further verified accurately due to the limited experimental data and poor accuracy of InGaNP alloy content. In addition, the effects of annealing on the parameters in the BAC model are seldom discussed. In this paper, we summarize the work done by other groups and obtain the parameters in the BAC model at room temperature for GaN y P 1y and In x Ga 1x N y P 1y . The annealing effects on the parameters in the BAC model for InGaNP and the origin for improving luminescence efficiency after annealing are also discussed.

show abstract

“…To compute band structure and charge density for the alloys, virtual crystal approximation (VCA) may be applied. Unlike metallic alloys the approximation has worked reasonably well to examine bandgaps, effective masses and bowing in other III-V and II-VI ternary and multi-component semiconductor alloys (Long et al 1996;Bechiri et al 2002;Bouarissa 2003;Ben Fredj et al 2007;Patel and Joshi 2007). However, for better description, effect of disorder needs to be considered.…”

Section: Empirical Pseudopotential Methodsmentioning

confidence: 99%

“…Bechiri et al 2002;Ben Fredj et al 2007), which has shown improvement in the evaluation of bandgaps, effective masses and bowing in other III-V and II-VI ternary and multi-component semiconductor alloys(Bechiri et al 2002;Ben Fredj et al 2007;Swarnkar et al 2009;Joshi et al 2010).…”

mentioning

confidence: 99%

Electronic properties and charge density of Be x Zn1 − x Te alloys

Swarnkar¹,

Paliwal

Patel

et al. 2011

Bull Mater Sci

View full text Add to dashboard Cite

Electronic band structure calculations are performed for the Be x Zn 1−x Te (0≤x≤1 in steps of 0·2) alloys following the empirical pseudopotential method. The alloying effects are modelled through the modified virtual crystal approximation. Throughout the composition, valence band maximum resides at the point. The conduction band minimum, however, shifts from to X point of symmetry when x = 0·27. The observed crossover from direct to indirect bandgap is well in accordance with the experimental observations. Effect of alloying on the density of states is also discussed. The charge density distribution along a few major planes is computed and discussed. The electronic band structure related parameters like bandwidths, bandgaps and ionicity are reported and compared with experimental data wherever available. We also give estimates of cohesive energy and bulk modulus for the alloys.

show abstract

Influence of the composition fluctuation and the disorder on the bowing band gap in semiconductor materials

Cited by 27 publications

References 80 publications

Electronic structure of BeTe and ZnTe

Electronic structure of BeTe and ZnTe

The parameters in the band-anticrossing model for In x Ga1−x N y P1−y before and after annealing

Electronic properties and charge density of Be x Zn1 − x Te alloys

Contact Info

Product

Resources

About