Influence of the electrochemical processing parameters on the photocurrent–voltage conversion characteristics of copper bismuth selenide photoactive films

Eraky, Mostafa S.; Sanad, Moustafa M.S.; Elsayed, E. M.; Shenouda, Atef Y.; El-Shereafy, E.

doi:10.1140/epjp/s13360-022-03039-1

Cited by 4 publications

(1 citation statement)

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“…The z-distribution was determined for the selectively grown epitaxial layer from the obtained data. As an alternative to the proposed technique for determining the composition, energy-dispersive X-ray spectroscopy (EDS) can be used [29,30]. However, we consider it more labor-intensive and less accurate in resolution for spatial scanning.…”

Section: Fabrication Of Experimental Samplesmentioning

confidence: 99%

Features of Metalorganic Chemical Vapor Deposition Selective Area Epitaxy of AlzGa1−zAs (0 ≤ z ≤ 0.3) Layers in Arrays of Ultrawide Windows

Shamakhov,

Slipchenko,

Nikolaev

et al. 2023

Technologies

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AlzGa1−zAs layers of various compositions were grown using metalorganic chemical vapor deposition on a GaAs substrate with a pattern of alternating SiO2 mask/window stripes, each 100 µm wide. Microphotoluminescence maps and thickness profiles of AlzGa1−zAs layers that demonstrated the distribution of the growth rate and z in the window were experimentally studied. It was shown that the layer growth rate and the AlAs mole fraction increased continuously from the center to the edge of the window. It was experimentally shown that for a fixed growth time of 10 min, as z increased from 0 to 0.3, the layer thickness difference between the center of the window and the edge increased from 700 A to 1100 Å, and the maximum change in z between the center of the window and the edge reached Δz 0.016, respectively. Within the framework of the vapor -phase diffusion model, simulations of the spatial distribution of the layer thickness and z across the window were carried out. It was shown that the simulation results were in good agreement with the experimental results for the effective diffusion length D/k: Ga—85 µm, Al—50 µm.

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Section: Fabrication Of Experimental Samplesmentioning

confidence: 99%