Influence of the electrode wear on the EUV generation of a discharge based extreme ultraviolet light source

Vieker, Jochen; Bergmann, K.

doi:10.1088/1361-6463/aa7c9f

Cited by 20 publications

(8 citation statements)

References 19 publications

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“…Nevertheless, there are several ways to minimize the intensity of the wall ablation process and, accordingly, the contamination of the spectrum: 1) by choosing the capillary material such that the elements from which the capillary is made do not have spectral lines in the desired radiation range (or are not excited in the plasma), 2) by a high rate of energy input into the plasma, which is provided by a low inductance of the discharge circuit and a corresponding increase in the rate of current growth. On the other hand, in order to reduce the thermal load on the capillary and the erosion of the cathode, we have developed a highvoltage generator that provides fast charging of the capacitor bank during ∼ 100 ns, which is an order of magnitude less than that of gas-discharge compact sources known from the literature SXR [5].…”

Section: Methodsmentioning

confidence: 99%

Optimization of parameters of a compact soft X-ray source for operation in the wavelength range 2-5 nm

et al. 2022

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This paper presents a compact source of soft X-ray radiation for operation in the wavelength range of 2-5 nm with a pulse repetition frequency of more than 500 Hz. The source parameters were optimized to reduce the intensity of ablation of the discharge volume wall and obtain the maximum intensity of the spectral lines of multicharged ions C V --- 4 nm and Ar IX --- 4.87 nm. The obtained results can be used in the development of a microscope for the tasks of cell transmission microscopy with nanometer resolution. Keywords: High-voltage pulse generator, Capillary plasma, "Water-window" microscopy.

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Section: Methodsmentioning

confidence: 99%

Optimization of parameters of a compact soft X-ray source for operation in the wavelength range 2-5 nm

et al. 2022

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“…The Talbot lithographic approach is ideally suited for partially coherent radiation with a relative spectral bandwidth of 2% to 4%. Consequently, it finds direct application in nanopatterning using radiation from plasma-based EUV sources, especially those operating with an Argon/Xenon gas mixture, resulting in a primary wavelength of 10.9 nm 15,22 . In cases where EUV radiation with a main wavelength of 13.5 nm is needed (e.g., for photoresist characterization), the source can be operated with Xenon mainly, and the emitted radiation can be spectrally filtered for the target wavelength and spectral bandwidth using a tailored multilayer mirror 23 .…”

Section: Achromatic Talbot Lithographymentioning

confidence: 99%

Investigation of the resolution limit of Talbot lithography with compact EUV exposure tools

Lüttgenau,

Brose,

Danylyuk

et al. 2023

38th European Mask and Lithography Conference (EMLC 2023)

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“…Additionally, the stationary behavior of the intensity modulation in the achromatic Talbot regime reduces the precision requirements for mask-wafer positioning and some degree of displacement or tilt can be accepted. Since the Talbot lithographic approach is perfectly suited for partially coherent radiation with a relative spectral bandwidth of 2 to 4%, it can be directly utilized for nanopatterning approaches using radiation from plasma-based EUV sources operated with an argon/xenon gas mixture resulting in a main wavelength 10.9 nm 15,22 . If EUV radiation with a main wavelength of 13.5 nm is required, e.g.…”

Section: Achromatic Talbot Lithographymentioning

confidence: 99%

Towards the resolution limit of Talbot lithography with compact EUV exposure tools

Lüttgenau

Brose

Danylyuk

et al. 2022

International Conference on Extreme Ultraviolet Lithography 2022

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In this contribution, the authors present the design and fabrication of optimized phase-shifting transmission masks for high-resolution nanopatterning with a compact EUV exposure tool. Several influencing factors on the achievable resolution are determined and characterized, paving the way towards the theoretical resolution limit in the sub-10 nm range. Applications that require high resolution patterns are numerous, leading to an increasing demand for compact exposure tools and lithographic concepts. The realized exposure tool is a compact and versatile setup, that can be operated either at an exposure wavelength of 10.9 nm or 13.5 nm addressing both large area nanopatterning with maximized throughput and industrial resist qualification with highest resolution. For partially coherent radiation as provided by the utilized discharge-plasma produced (DPP) EUV radiation source of the setup, the (achromatic) Talbot lithography has proven to be the most suitable lithographic approach with a demonstrated resolution in the sub-30 nm regime and a theoretical resolution limit below 10 nm. To maximize the contrast of the resulting intensity distribution in wafer plane, the material composition and geometry of the mask are optimized by means of rigorous coupled-wave (RCWA) simulations. Different influencing factors on the achievable resolution are identified and presented. In addition to the simulative optimization of the phase-shifting masks, the fabrication of the dense periodic nanopatterns becomes more and more challenging for smaller periods. In this contribution the mask fabrication process is optimized to create stable and high-resolution periodic mask patterns, leading to record resolution for both line and pinhole periodic nanopatterns with the presented setup.

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Influence of the electrode wear on the EUV generation of a discharge based extreme ultraviolet light source

Cited by 20 publications

References 19 publications

Optimization of parameters of a compact soft X-ray source for operation in the wavelength range 2-5 nm

Optimization of parameters of a compact soft X-ray source for operation in the wavelength range 2-5 nm

Investigation of the resolution limit of Talbot lithography with compact EUV exposure tools

Towards the resolution limit of Talbot lithography with compact EUV exposure tools

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