Influence of the energy density on the structure and morphology of polycrystalline silicon films treated with electron beam

Fu, Li; Gromball, F.; Groth, Christoph; Ong, Kenny; Linke, Norbert; Müller, Jörg

doi:10.1016/j.mseb.2006.09.004

Cited by 3 publications

(2 citation statements)

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“…The whisker growth occurs at a processing temperature of 800°C, which is well below the WSi 2 eutectic temperature of 1390°C. 53 This indicates the VSS growth mechanism for the Si whiskers, whose diameters range from about 10 to about 50 nm. Figure 5͑b͒ shows a cross-section TEM image of whisker growth on Si islands.…”

Section: B Silicon Whiskersmentioning

confidence: 81%

Si substrates texturing and vapor-solid-solid Si nanowhiskers growth using pure hydrogen as source gas

Nordmark¹,

Nagayoshi

Matsumoto

et al. 2009

Journal of Applied Physics

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Scanning and transmission electron microscopies have been used to study silicon substrate texturing and whisker growth on Si substrates using pure hydrogen source gas in a tungsten hot filament reactor. Substrate texturing, in the nanometer to micrometer range of mono- and as-cut multicrystalline silicon, was observed after deposition of WSi2 particles that acted as a mask for subsequent hydrogen radical etching. Simultaneous Si whisker growth was observed for long residence time of the source gas and low H2 flow rate with high pressure. The whiskers formed via vapor-solid-solid growth, in which the deposited WSi2 particles acted as catalysts for a subsequent metal-induced layer exchange process well below the eutectic temperature. In this process, SiHx species, formed by substrate etching by the H radicals, diffuse through the metal particles. This leads to growth of crystalline Si whiskers via metal-induced solid-phase crystallization. Transmission electron microscopy, electron diffraction, and x-ray energy dispersive spectroscopy were used to study the WSi2 particles and the structure of the Si substrates in detail. It has been established that the whiskers are partly crystalline and partly amorphous, consisting of pure Si with WSi2 particles on their tips as well as sometimes being incorporated into their structure.

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Section: B Silicon Whiskersmentioning

confidence: 81%

Si substrates texturing and vapor-solid-solid Si nanowhiskers growth using pure hydrogen as source gas

Nordmark¹,

Nagayoshi

Matsumoto

et al. 2009

Journal of Applied Physics

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show abstract

“…6d. Fu et al, 2007) It was suggested that the voids are caused by the volume change of the capping layer and the silicon melt during the recrystallization process. Early work [6] suggested that the silicon dioxide in the capping layer could be considered as a fluid with a relatively high viscosity at the EB treatment temperature.…”

Section: Microstructure Of the Capping Layermentioning

confidence: 99%

Application of Electron Beam Treatment in Polycrystalline Silicon Films Manufacture for Solar Cell

Fu¹

2011

Solar Cells - Thin-Film Technologies

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Photovoltaics literature survey (No. 54)

Shalav

2007

Progress in Photovoltaics

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Influence of the energy density on the structure and morphology of polycrystalline silicon films treated with electron beam

Cited by 3 publications

References 9 publications

Si substrates texturing and vapor-solid-solid Si nanowhiskers growth using pure hydrogen as source gas

Si substrates texturing and vapor-solid-solid Si nanowhiskers growth using pure hydrogen as source gas

Application of Electron Beam Treatment in Polycrystalline Silicon Films Manufacture for Solar Cell

Photovoltaics literature survey (No. 54)

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