Influence of the free-electron concentration on the optical properties of zincblende GaN up to 
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Baron, Elias; Goldhahn, R.; Deppe, Michael; As, D. J.; Feneberg, Martin

doi:10.1103/physrevmaterials.3.104603

Cited by 8 publications

(13 citation statements)

References 79 publications

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“…The sample was studied by means of steady-state spectroscopic ellipsometry, photoluminescence, Raman spectroscopy, and Hallmeasurements earlier. The results of these experiments can be found elsewhere [30,37,38]. trSE measurements were performed using a femtosecond pulsed laser [10], according to Fig.…”

Section: Methodsmentioning

confidence: 99%

“…Furthermore, electron scattering to other conduction band minima within the BZ [8] should be negligible. Other band structure related parameters, like effective masses, have also been studied before [26,27,30]. This should enable zb-GaN to be an promising candidate for understanding the fundamental processes that happen on the femto-and picosecond timescale.…”

Section: Introductionmentioning

confidence: 99%

“…This should enable zb-GaN to be an promising candidate for understanding the fundamental processes that happen on the femto-and picosecond timescale. The influence of many-body effects like band-filling and band gap renormalization on the absorption onset in semiconductors is widely known [30][31][32][33][34]. Understanding these effects is essential for technical applications [35,36].…”

Section: Introductionmentioning

confidence: 99%

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Femtosecond pump-probe absorption edge spectroscopy of cubic GaN

Baron¹,

Goldhahn²,

Espinoza³

et al. 2022

Preprint

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Time-dependent femtosecond pump-probe spectroscopic ellipsometry studies on zincblende gallium-nitride (zb-GaN) are performed and analyzed between 2.9-3.7eV. An ultra-fast change of the absorption onset (3.23eV for zb-GaN) is observed by investigating the imaginary part of the dielectric function. The 266nm (4.66eV) pump pulses induce a large free-carrier concentration up to 4 × 10 20 cm −3 , influencing the transition energy between conduction and valence bands due to many-body effects, like band filling and band gap renormalization, up to ≈500meV. Additionally, the absorption of the pump-beam creates a free-carrier profile within the 605nm zb-GaN layer. This leads to varying optical properties from sample surface to substrate, which are taken into account by grading analysis for an accurate description of the experimental data. A temporal resolution of 100fs allows in-depth investigations of occurring ultra-fast relaxation and recombination processes. We provide a quantitative description of the free-carrier concentration and absorption onset at the sample surface as a function of relaxation, recombination, and diffusion yielding a characteristic relaxation time of 0.19ps and a recombination time of 26.1ps.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Femtosecond pump-probe absorption edge spectroscopy of cubic GaN

Baron¹,

Goldhahn²,

Espinoza³

et al. 2022

Preprint

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“…It should be noted that Equation only applies for the case of the negligible spin‐orbit splitting of the valence bands

(Δ_{so} ≪ E_{normalG})

. P can be determined by looking at the effective mass at the Γ point of the Brillouin zone for the undoped material at room temperature (band mass

m_{0}^{*} (Γ)

)

E_{normalP} = \frac{2 m_{normale}}{ℏ^{2}} P^{2} = E_{normalG}^{RT} (\frac{m_{e}}{m_{0}^{*} (Γ)} - 1) .

…”

Section: Theorymentioning

confidence: 99%

Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN

Baron

Goldhahn

Deppe

et al. 2019

Physica Status Solidi (b)

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An investigation of different n‐type doped zincblende gallium nitride thin films measured by photoluminescence from 7 K to room temperature is presented. The spectra change with increasing free‐carrier concentration due to many‐body effects such as the Burstein–Moss shift and band‐gap renormalization. The samples are grown by molecular beam epitaxy on a 3C‐SiC/Si (001) substrate, and a free‐carrier concentration above 1020 cm−3 is achieved by introducing germanium as a donor. The analysis of the measured spectra by a line‐shape fit yields different transition processes for different doping concentrations and temperatures, such as a band–band transition and a band–acceptor transition. The conduction band dispersion of Kane's model is perfectly suited to explain the experimental data quantitatively.

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“…The natural appearance of these compounds corresponds to a crystalline structure of the wurtzite (WZ, hexagonal) type, which reveals as their lowest-enthalpy allotropic form. However, the zincblende (ZB, cubic) phase is only slightly higher in energy, and it has been possible to grow it in the form of thin films with suitable thermodynamical stability [4][5][6][7][8][9][10][11][12][13]. Contrary to the wurtzite phase, the zincblende -as a centrosymmetric material-lacks internal electric polarizations in the unit cell; which has been named as the source of emission efficiency loss when using WZ III-V nitrides as core elements of light-emitting diodes and semiconductor lasers (see [14,15] and references therein).…”

Section: Introductionmentioning

confidence: 99%

The infuence of compressive lattice deformations on the zone-center energy band properties of zincblende GaN and InN. Hybrid density functional results

Correa¹

2021

Preprint

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We have investigated the effects of hydrostatic pressure and compressive biaxial strain on the Γ-point energy states of GaN and InN with zincblende crystal structure via first-principles DFT+HSE06 computation. To correctly reproduce accepted experimental values of the energy band gap of both compounds, the procedure includes modified exchange-correlation fractions in the HSE hybrid functional, changing from the standard value α = 0.25 to α = 0.43 (GaN) and α = 0.40 (InN). Within this environment, the work reports on the variation of conduction and valence band edges as functions of the lattice deformation. In addition, we present fitted expressions describing the change in the band gap and the spin-orbit splitting energy due to unit cell size modification. All these parameters are main input quantities in the description of electronic and optical properties of InN/GaN-based heterostructures.

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Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3

Cited by 8 publications

References 79 publications

Femtosecond pump-probe absorption edge spectroscopy of cubic GaN

Femtosecond pump-probe absorption edge spectroscopy of cubic GaN

Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN

The infuence of compressive lattice deformations on the zone-center energy band properties of zincblende GaN and InN. Hybrid density functional results

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