2006
DOI: 10.1103/physrevb.74.064102
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Influence of the growth direction on properties of ferroelectric ultrathin films

Abstract: A first-principles-based approach is developed and used to investigate Pb͑Zr 0.4 Ti 0.6 ͒O 3 ultrathin films having different growth directions and subject to different boundary conditions. A wide variety of dipole patterns is found, including ferroelectric phases absent in the bulk and different periodic stripe nanodomains. Moreover, a large enhancement of dielectricity is found in ultrathin films exhibiting a growth direction that differs from a possible direction of the polarization in the corresponding bul… Show more

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Cited by 33 publications
(45 citation statements)
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“…It is predicted that, under zero field, such stripes alternate along [1][2][3][4][5][6][7][8][9][10] I II III IV I II III IV I II III IV I II III IV …”
Section: Discussionmentioning
confidence: 99%
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“…It is predicted that, under zero field, such stripes alternate along [1][2][3][4][5][6][7][8][9][10] I II III IV I II III IV I II III IV I II III IV …”
Section: Discussionmentioning
confidence: 99%
“…Note that the stripe to bubble domain transition is numerically found for E z in between 41×10 7 and 45×10 7 V/m (because of the zigzagged domain walls, it is difficult to exactly pin point the onset of stripe to bubble domain transition, unlike in PZT thin films [9]). Once the nanobubbles are formed, they dramatically contract along [110] while keeping their width along [1][2][3][4][5][6][7][8][9][10] more or less the same under further applied field − as seen in Figs. 1d and 1e.…”
Section: Region IIImentioning
confidence: 99%
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“…In addition, no firstprinciple based calculations results have been published so far on anisotropic biaxial misfit strain phase diagrams. The influence of different growth directions has indeed already been considered [186], but the strain field applied on the material was taken as isotropic. These calculations, though computer-wise intensive, would provide the community with predictive tools for reduced-size device design.…”
Section: Anisotropic Misfit Strainmentioning
confidence: 99%