Influence of the Localization of Ge Atoms within the Si(001)(4 × 2) Surface Layer on Semicore One-Electron States

Abstract

Adsorption complexes of germanium on the reconstructed Si(001) (4ˆ2) surface have been simulated by the Si 96 Ge 2 H 84 cluster. For Ge atoms located on the surface layer, DFT calculations (B3LYP/6-31G**) of their 3d semicore-level energies have shown a clear-cut correlation between the 3d 5{2 chemical shifts and mutual arrangement of Ge atoms. Such a shift is positive when only one Ge atom penetrates into the crystalline substrate, while being negative for both penetrating Ge atoms. We interpret these results in terms of the charge distribution in clusters under consideration.

Special Issue “50th Anniversary of the Kohn–Sham Theory—Advances in Density Functional Theory”

“…In the work of Tkachuk et al [8] we can read how to simulate adsorption complexes of germanium on a Si surface. A clear correlation between the chemical shift and the arrangement of the Ge atoms is shown.…”