Influence of the Magnetic Field on the Diffusion Capacitance of a Serial Vertical Junction Silicon Solar Cell in Frequency Modulation

Abstract

In this work, a theoretical study of the effect of the magnetic field on the minority charge carrier density and the diffusion capacity of a silicon solar cell with vertical junction in series in dynamic frequency regime, is done. From the relative continuity equation of the minority charge carriers' density we establish the boundary condition at the junction and the base medium. The expression of the density of minority carriers of charges in the base, allows us to determine the capacity of diffusion of the solar cell according to the magnetic field, the frequency of modulation, the wavelength of illumination and a junction recombination velocity. The profile of the diffusion coefficient allowed us to make a choice on the values of the magnetic field. These values of the magnetic field intensity will be fixed throughout this article. Each value of the magnetic field strength corresponds to a well-defined value of the resonance frequency. We obtained two ranges of illumination wavelengths from the minority charge carrier' density profile. The influence of the magnetic field on the diffusion coefficient, of the density of minority charge carriers in short-circuit and open-circuit conditions and of the diffusion capacity, for a specific wavelength, is theoretically studied.

Influence of the Wavelength on the Series and Shunt Resistances of a Polycrystalline Silicon Solar Cell n+-p-p+ in Frequency Modulation

“…The excess minority carriers in the base will flow towards the two junctions by diffusion. The obtained photocurrent density is given by [28,29]:…”