Influence of the plasma parameters and nitrogen addition on the electrical characteristics of DLC films deposited by inductively coupled plasma deposition

Mousinho, Ana Paula; Mansano, Ronaldo Domingues

doi:10.1016/j.apsusc.2007.07.115

Cited by 24 publications

(8 citation statements)

References 8 publications

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“…Yet, the various nitrogen forms and their interrelations in plasma have not been covered in literature consistently [6][7][8]. Partly this is the reason that data referred in literature sometimes are contradictory [11][12][13].…”

Section: Introductionmentioning

confidence: 98%

“…Actually, required properties of the films obtained by this method could easily be varied by changing the deposition parameters. The properties of coatings could be modified either by dopants [6][7][8] or structurally via the variation of technological parameters, i.e. power of ion source, voltage applied to substrate, availability of additional electric or magnetic fields, process geometry changes, etc.…”

Section: Introductionmentioning

confidence: 99%

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Low resistive diamond like carbon film development technique

et al. 2009

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Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Low resistive diamond like carbon film development technique

et al. 2009

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“…Paul et al have studied the effect of gold-doped DLC on residual stress using a radiofrequency (RF) capacitively coupled plasma chemical vapor deposition (CCP-CVD) sputtering technique at room temperature [8]. In addition, numerous researchers and groups have synthesized N-DLC thin films using various deposition methods such as microwave surface-wave plasma CVD [9], DC magnetron sputtering [10], electron cyclotron resonanceassisted microwave plasma CVD (ECR-MPCVD) [11], and inductively coupled plasma deposition (ICP) systems [1,12].…”

Section: Introductionmentioning

confidence: 99%

The effect of nitrogen concentration on the properties of N-DLC prepared by helicon wave plasma chemical vapor deposition

Yang¹,

Huang²,

Li³

et al. 2022

Plasma Sci. Technol.

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Nitrogen-doped diamond-like carbon (N-DLC) films were synthesized by helicon wave plasma chemical vapor deposition (HWP-CVD). The mechanism of the plasma influence on the N-DLC structure and properties was revealed by the diagnosis of plasma. The effects of nitrogen doping on the mechanical and hydrophobicity properties of DLC films were studied. The change of the ratio of precursor gas flow reduces the concentration of film-forming groups, resulting in the decrease of growth rate with the increase of nitrogen flow rate. The morphology and structure of N-DLC films were characterized by scanning probe microscopy (SEM), Raman spectroscopy (Raman), X-ray photoemission spectroscopy (XPS). The mechanical properties and wettability of N-DLC were analyzed by ultra-microhardness tester and JC2000DM system. The results show that the content ratio of N+ and N2+ is positively correlated with the mechanical properties and wettability of N-DLC films. The enhancement hardness and elastic modulus of N-DLC are attributed to the increase of sp3 C-N bond content in the film, reaching 26.5 GPa and 160 GPa respectively. Water contact measurement shows that the increase of the N-bond structure in N-DLC makes the film have excellent hydrophobic properties, and the optimal water contact angle has reached 111.2 degree. It is shown that the HWP technology has unique advantages in the modulation of functional nanomaterials.

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“…It is pointed out that a band gap of DLC films can be changed by the ratio of bonding state, trihedral (sp 2 ) to tetrahedral (sp 3 ), regardless of the amorphous structure. Moreover, the pn-conduction type is also expected to be controllable using some impurities, such as boron (B), [1][2][3] nitrogen (N), [4][5][6][7][8][9] and phosphorus (P). 3,[10][11][12][13] N is one of the convenient elements for doping DLC films.…”

Section: Introductionmentioning

confidence: 99%

“…Nitrogen gas (N 2 ) is used as a source gas and is easy to add into a DLC deposition system. Therefore, many studies have been carried out using a variety of deposition methods, such as sputtering, 4,5) inductively coupled plasma-chemical vapor deposition (ICP-CVD), 6) and microwave surface-wave plasma (MW-SWP) CVD. [7][8][9] However, DLC films usually have very high electrical resistivity, generally spanning from 10 2 to 10 16 cm.…”

Section: Introductionmentioning

confidence: 99%

Optical and Electrical Properties of Nitrogen-Doped Diamond-Like Carbon Films Prepared by a Bipolar-Type Plasma-Based Ion Implantation

Nakao¹,

Soga

Sonoda³

et al. 2012

Jpn. J. Appl. Phys.

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Diamond-like carbon (DLC) films are prepared by a bipolar-type plasma-based ion implantation (PBII) technique using toluene and nitrogen gases (N 2 ), and the optical and electrical properties are examined as a function of N 2 flow rate. The N concentration in the films and structural changes are also examined by Rutherford backscattering spectrometry (RBS), atomic force microscopy (AFM), and Raman spectroscopy. It is found that the deposition rate decreases, but N concentration linearly increases with increasing N 2 flow rate. Granular surfaces are observed and the grains decreases in size as N 2 flow rate increases. In addition, Raman analysis suggests that aromatic ring clusters and the amorphous structure increase in amount. The optical band gap and conductivity increase with increasing N concentration up to about 11 at. %, and then decrease with further increase in N concentration. #

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Influence of the plasma parameters and nitrogen addition on the electrical characteristics of DLC films deposited by inductively coupled plasma deposition

Cited by 24 publications

References 8 publications

Low resistive diamond like carbon film development technique

Low resistive diamond like carbon film development technique

The effect of nitrogen concentration on the properties of N-DLC prepared by helicon wave plasma chemical vapor deposition

Optical and Electrical Properties of Nitrogen-Doped Diamond-Like Carbon Films Prepared by a Bipolar-Type Plasma-Based Ion Implantation

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