Influence of the positron implantation profile on the study of the defect depth distribution by the positron annihilation technique

Abstract

The formulas obtained for deconvolution of positron mean lifetime results in the sequential etching technique for detecting defect depth profiles are presented. In this experiment, only the conventional positron lifetime measurement with radioisotope-based positrons is used. The important role of the positron implantation profile is discussed. These formulas were successfully used to describe the depth profile of defects formed in sliding contact in pure vanadium. Two different layers were detected below the surface.