Influence of the Pt electrode on the properties of sol-gel PZT-films

Willems, Gert; Wouters, Dirk J.; Maes, H.E.

doi:10.1016/0167-9317(95)00149-2

Cited by 26 publications

(7 citation statements)

References 8 publications

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“…This role of Ti is masked when using the standard Pt/Ti electrodes, because the Ti is supplied unintentionally by the adhesion layer, which partially diffuses up to the Pt surface [2,8]. For this reason, standard Pt/Ti electrodes improve with suitable tempering procedures before deposition [9,10]. It can be assumed that they provide a certain amount of titanium oxide (i.e., titania) on the surface.…”

Section: Introductionmentioning

confidence: 99%

Texture control of PbTiO3 and Pb(Zr,Ti)O3 thin films with TiO2 seeding

Muralt

Maeder

Sagalowicz

et al. 1998

Journal of Applied Physics

265

131

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The nature and the role of 1 to 5 nm thick TiO 2 seed layers for the growth of textured PbTiO 3 and Pb(Zr,Ti)O 3 thin films on textured Pt(111) thin film substrates have been studied. Under otherwise identical in situ sputter deposition process conditions, the PbTiO 3 texture could be turned from (100) to (111) orientation by adding the seed layer. This is demonstrated by patterning the TiO 2 film. Auger electron spectroscopy and x-ray photoemission spectroscopy showed that the seed layer was a continuous TiO 2 film. X-ray photoelectron diffraction measurements revealed epitaxial ordering in the seed layer. As there is no azimuthal order among the Pt grains, the reduced information of azimuthally averaged polar cuts is obtained. These give strong evidence for a strained rutile (110) structure. Various deposition experiments indicated that the TiO 2 is effective only when it is ordered before the PbTiO 3 nucleation starts. The epitaxial relationship between PbTiO 3 (111) and Pt(111) is thus mediated by the intermediate, epitaxial TiO 2 film, which is dissolved or transformed to PbTiO 3 afterwards. The observed growth behavior is discussed in terms of surface and interface energies.

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Section: Introductionmentioning

confidence: 99%

Texture control of PbTiO3 and Pb(Zr,Ti)O3 thin films with TiO2 seeding

Muralt

Maeder

Sagalowicz

et al. 1998

Journal of Applied Physics

265

131

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“…Many evidences have proved that the using of buffer layer in uences the preferred orientation, as well as surface morphology of the lm [29,30]. To increase the preferred (100) orientation, 100-nm-thick strongly (100) oriented sol-gel-derived PZT lm was used as buffer layer between as-deposited PZT lm and the substrate.…”

Section: Pvp-assisted Sol-gel Methodsmentioning

confidence: 99%

Fabrication of thick Pb(Zr,Ti)O3 (PZT) films by modified sol–gel methods for application in MEMS

Chu¹,

Lu²,

Huang³

et al. 2002

Journal of Micromechatronics

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Pb(Zr,Ti)O 3 (PZT) lms with thickness ranging from 2 ¹m to 10 ¹m have successfully been prepared using the sol-gel-based ceramic-ceramic 0-3 composite method, polyvinylpyrrolidone (PVP)-assisted sol-gel method and electrostatic spray deposition (ESD) with satis ed lm properties on Pt/Ti/SiO 2 /Si substrate. Using PVP and PZT powders as additives, the critical thickness of sol-gel derived PZT lm can be suf ciently increased to 0.9 ¹m and 0.5 ¹m, respectively. The crystalorientation of the lms was investigated by X-ray diffractometer. It was found that the use of buffer layer was effective to affect the lm's nucleation and growth behavior and enhance the pervoskite (100) orientation. According to the atomic force microscope images, these lms exhibit uniform grain size distribution. The relative dielectric constants of the lm prepared by these modi ed sol-gel techniques, 1050, 600 and 960, were measured, which are satis ed for application in MEMS.

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“…4 it can be seen that the (110) peak is following the same tendency as the (100) orientation. This orientation is the dominant peak in the randomly oriented PZT powders, [5], [6]. In a crystalline film it is a measure of crystallites with a random orientation, it is present where both (100) and ( 1 1 1 ) orientations are present in the sample, and is higher when their ratio is closer to 1.…”

Section: Xrdmentioning

confidence: 96%

“…5. The orientation of PZT film is influenced by numerous factors, as found by many researchers [4]- [6], which makes its control and the explanation of the results very difficult. However, the results obtained for samples crystallized at 500°C and 600°C are in agreement with the one presented in [4], [5], with the difference that in our case the formation of the perovskite phase starts at lower temperatures.…”

Section: Xtemmentioning

confidence: 98%

See 1 more Smart Citation

Quantitative determination of the dielectric constant of the interfacial layer in PZT ferroelectric capacitors

Bartic

Wouters²,

Jin³

et al.

ISAF 1998. Proceedings of the Eleventh IEEE International Symposium on Applications of Ferroelectrics (Cat. No.98CH36245)

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Absrruct -The crystallization of PbZro *Tio thin films was investigated by varying the crystallization temperature and time. Some of the films were not fully crystallized presenting amorphous top layers. The films have been structurally characterized by XTEM and XRD, and electrically characterized by hysteresis and CV measurements. The evolution of orientation and crystallization is observed for the different conditions and is correlated with hysteresis loops. The dielectric constant is determined for both the amorphous layers and the crystalline phase, and the CV behavior is explained.

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Influence of the Pt electrode on the properties of sol-gel PZT-films

Cited by 26 publications

References 8 publications

Texture control of PbTiO3 and Pb(Zr,Ti)O3 thin films with TiO2 seeding

Texture control of PbTiO3 and Pb(Zr,Ti)O3 thin films with TiO2 seeding

Fabrication of thick Pb(Zr,Ti)O3 (PZT) films by modified sol–gel methods for application in MEMS

Quantitative determination of the dielectric constant of the interfacial layer in PZT ferroelectric capacitors

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