Influence of the RF power on the deposition rate and the chemical surface composition of fluorocarbon films prepared in dry etching gas plasma

Yanev, V.; Krischok, S.; Opitz, Andreas; Wurmus, Helmut; Schaefer, J. A.; Schwesinger, Norbert; Ahmed, S.I.-U.

doi:10.1016/j.susc.2004.06.096

Cited by 26 publications

(15 citation statements)

References 6 publications

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“…Raising the fluorine atom concentration in fluorocarbon plasma up to a saturated condition, the ion bombardment is initiated with F/C precursor ratio of 4 or larger to suppress polymerization by the enhanced etching process. 13,14 With the growth of Teflon-like film at F/C precursor ratio of 3, the water-repellent nano-roughened surface reveals a large water contact angle h c > 108 ( Fig. 1 inset) as compared to that of the bare PET substrate with h c of only 78 .…”

Section: Resultsmentioning

confidence: 99%

Nano-Roughened Teflon-Like Film Coated Polyethylene Terephthalate Substrate with Trifluoromethane Plasma Enhanced Hydrophobicity and Transparency

Pai¹,

Lin²

2011

J. Electrochem. Soc.

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Nano-roughened Teflon-like films with manipulated topography and chemical bonds are demonstrated to concurrently enhance hydrophobicity and transparency. By fluorocarbon plasma deposition with tunable F/C precursor ratio on polyethylene terephtha-late substrate, the nano-roughened Teflon-like film prepared with an F/C precursor ratio of 3 reveals a repellent water-contact angle with long-term bonding stability due to its extremely low surface energy density of 28 mN/m caused by enhancing the highly cross-linking-CF2 functional groups. Increasing the F/C precursor ratio up to 4 oppositely reduces the F/C composition ratio and down-shifts the XPS binding energy peak of the C-F bond in-CFx groups with increasing bond length, which inevitably shrinks the water contact angle after thermal stability test for 24 h. Enlarging the reaction time with trifluoromethane plasma enriches the fluorine atom content to improve the cross-linking capability of-CFx and-C-CFx bonds, simultaneously promoting the high hydro-phobicity and transparent surface with water contact angle up to 133 and minimum absorption coefficient of 5623 cm1 at 450 nm, respectively. VC 2011 The Electrochemical Society. [DOI: 10.1149/1.3596712] All rights reserved. Manuscript submitted March 21, 2011; revised manuscript received April 27, 2011. Published June 3, 2011. Polymer based flexible optoelectronic devices which are friendly with environment and are suitable for mobile power sources have attracted considerable attention during past few years. However, th

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Section: Resultsmentioning

confidence: 99%

Nano-Roughened Teflon-Like Film Coated Polyethylene Terephthalate Substrate with Trifluoromethane Plasma Enhanced Hydrophobicity and Transparency

Pai¹,

Lin²

2011

J. Electrochem. Soc.

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“…Fluorine can react with solid surfaces (including polymer) leading to volatile etch products, while CF x radicals are responsible for polymer deposition. 35 The increase in RF power directly enhances the density of all active species, including atoms, radicals, and ions. By using a 1/1 CHF 3 /C 2 H 4 ratio, the excess of C 2 H 4 ensures very low density of fluorine.…”

Section: Effect Of Power Inputmentioning

confidence: 99%

Optimized plasma-polymerized fluoropolymer mask for local porous silicon formation

Defforge

Fodor

et al. 2016

Journal of Applied Physics

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Mass production of hybrid silicon/porous silicon substrates requires a simple, low-cost, and reliable patterning process to locally form porous regions on silicon wafers. An innovative masking technology based on plasma-polymerized fluoropolymer (PPFP) has been proposed as a promising candidate. However, the use of PPFP film on silicon substrate requires an adhesion promoter which may cause several side effects, including film peeling-off and pinhole formation. This work aims to improve the adhesion strength without using the adhesion promoter. The present study shows that, by adopting a hydrogen-terminated surface and an optimized gas precursor composition of 25/25 sccm CHF 3 /C 2 H 4 , good adhesion of PPFP to silicon is obtained before and during porous silicon formation. PPFP mask deposited at high pressure shows well-defined borders after anodization. Finally, an optimized PPFP-based patterning process is proposed. Published by AIP Publishing.

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“…The literature provides a lot of useful information on this topic since plasma-assisted dry-etching of Si, SiO 2 , and SiN x has been studied for many years. [8][9][10][11][12]15,16,[20][21][22][23][26][27][28][29][30][31][32][33][34] In fluorocarbon-based gas chemistries, the formation of thin films on etched surfaces was reported at an early stage. 21,32 The thickness d of these films depends on the material, 11 d Si Ͼ d SiN x Ͼ d SiO 2 , as well as on temperature 26 and self-bias 15,33,34 in the plasma reactor.…”

Section: B Potential Application Of Process Concept To Silicon Dioxidementioning

confidence: 99%

Silicon nitride hardmask fabrication using a cyclic CHF3-based reactive ion etching process for vertical profile nanostructures

Kaspar

Jeyaram

Jäckel

et al. 2010

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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A cyclic approach to silicon nitride dry-etching is presented, which differs in concept from most established high aspect ratio etching processes. Alternating steps of CHF3 etching and oxygen plasma treatment are applied to form vertical sidewalls. During the CHF3 etching step, an etch-inhibiting fluorocarbon film gradually forms on silicon nitride surfaces, whereas the oxygen plasma step removes the fluorocarbon layer and restores the bare nitride surface. By adjusting the timing between the two steps, the etch-inhibition by the fluorocarbon film can be controlled to yield vertical sidewalls. Using x-ray photoelectron spectroscopy, the formation and removal of the fluorocarbon film are confirmed, and its chemical composition is analyzed. The authors show the influence of cycle step duration on etched sidewall angles and present the results of an optimized set of etching parameters for smooth and vertical sidewalls. By feeding only one gas at a time to the plasma reactor, they avoid having to control the delicate balance between the fluxes of species that deposit and etch the fluorocarbon film. This makes their process very robust and removes the highly variable effects of reactor wall conditions. Finally, the authors comment on the feasibility of implementing a process for etching silicon dioxide in a similar fashion.

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Influence of the RF power on the deposition rate and the chemical surface composition of fluorocarbon films prepared in dry etching gas plasma

Cited by 26 publications

References 6 publications

Nano-Roughened Teflon-Like Film Coated Polyethylene Terephthalate Substrate with Trifluoromethane Plasma Enhanced Hydrophobicity and Transparency

Nano-Roughened Teflon-Like Film Coated Polyethylene Terephthalate Substrate with Trifluoromethane Plasma Enhanced Hydrophobicity and Transparency

Optimized plasma-polymerized fluoropolymer mask for local porous silicon formation

Silicon nitride hardmask fabrication using a cyclic CHF3-based reactive ion etching process for vertical profile nanostructures

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