Influence of the thickness of an antiferromagnetic IrMn layer on the static and dynamic magnetization of weakly coupled CoFeB/IrMn/CoFeB trilayers

Jhajhria, Deepika; Pandya, Dinesh K.; Chaudhary, Sujeet

doi:10.3762/bjnano.9.206

Cited by 4 publications

(4 citation statements)

References 61 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…4 [23]. The supplementary Figure S1 25], although an AFM-thickness-dependent interfacial roughness was also observed in these systems [ 26 ]. However, it should be noted that a noncollinear 3Q antiferromagnetic structure is present in these systems.…”

Section: Resultsmentioning

confidence: 94%

Influence of atomic roughness at the uncompensated Fe/CoO(111) interface on the exchange-bias effect

Xue

Maity

et al. 2020

Phys. Rev. B

View full text Add to dashboard Cite

The effect of interface roughness of ferromagnetic and antiferromagnetic layers on exchange bias is still not well understood. In this report we have investigated the effect of surface roughness in (111)oriented antiferromagnetic CoO films on exchange bias with ferromagnetic Fe grown on top. The surface roughness is controlled at the atomic scale, over a range below ~ 0.35 nm, by varying layer thickness of the CoO films. It is observed that both exchange bias field (H E ) and coercivity (H C ) extensively depend on the atomic scale roughness of the CoO (111) at the interface with Fe film. An opposite dependence of H E and H C on interface roughness was found, which was ascribed to partially compensated spin states induced by the atomic roughness at the fully uncompensated CoO (111)surfaces and was corroborated using the Monte Carlo simulations. Moreover, the onset temperature for H C is found to be up to ~ 80 K below the blocking temperature (T B ) and the temperature dependence -2 -of H C follows the power law with a critical exponent equal to one, which indicates that, in this system, H C is more of an interface-related property than H E .

show abstract

Section: Resultsmentioning

confidence: 94%

Influence of atomic roughness at the uncompensated Fe/CoO(111) interface on the exchange-bias effect

Xue

Maity

et al. 2020

Phys. Rev. B

View full text Add to dashboard Cite

show abstract

“…Most of the ISHE works on IrMn have been performed with crystalline FM materials like NiFe (Py) [15][16][17]. There have been very few reports of spin pumping with CoFeB/IrMn bilayers [18][19][20]. Jhajharia et al have studied spin pumping and inter-layer exchange coupling via damping analysis in CoFeB/IrMn/ CoFeB trilayer structure for variable IrMn thickness [18].…”

Section: Introductionmentioning

confidence: 99%

“…There have been very few reports of spin pumping with CoFeB/IrMn bilayers [18][19][20]. Jhajharia et al have studied spin pumping and inter-layer exchange coupling via damping analysis in CoFeB/IrMn/ CoFeB trilayer structure for variable IrMn thickness [18]. Tu et al have estimated the Nernst coeffecient via the anomalous Nernst effect [19] in a IrMn/CoFeB system with perpendicular magnetic anisotropy.…”

Section: Introductionmentioning

confidence: 99%

Spin pumping and inverse spin Hall effect in CoFeB/IrMn heterostructures

Roy¹,

Mishra²,

Gupta³

et al. 2021

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

High spin to charge conversion efficiency is a requirement for spintronic devices, which are governed by spin pumping and the inverse spin Hall effect (ISHE). In the last decade, ISHE and spin pumping have been heavily investigated in ferromagnet/heavy metal (HM) heterostructures. Recently, antiferromagnetic (AFM) materials have been found to be a good replacement for HMs because AFMs exhibit terahertz spin dynamics, high spin-orbit coupling, and absence of the stray field. In this context, we have performed the ISHE in CoFeB/IrMn heterostructures. Spin pumping studies are carried out for Co 40 Fe 40 B 20 (12 nm)/Cu(3 nm)/ Ir 50 Mn 50 (t nm)/AlO x (3 nm) samples where t value varies from 0 to 10 nm. Damping in all the samples is higher than in the single layer CoFeB which indicates that spin pumping due to IrMn is the underneath mechanism. Further, the spin pumping in the samples is confirmed by angle dependent ISHE measurements. We have also disentangled other spin rectifications effects and found that the spin pumping is dominant in all the samples. From the ISHE analysis the real part of spin mixing conductance (g ↑↓ r ) is found to be 0.704 ± 0.003 × 10 18 m −2 .

show abstract

“…Most of the ISHE works on IrMn have been performed with crystalline FM materials like Py [15][16][17]. There are very few reports of spin pumping with CoFeB/IrMn bilayers [18][19][20]. The preivous works lag systematic ISHE analysis.…”

Section: Introductionmentioning

confidence: 99%

Spin pumping and inverse spin Hall effect in CoFeB/IrMn heterostructures

Roy,

Mishra,

Gupta

et al. 2021

Preprint

View full text Add to dashboard Cite

The spin current based electronics, known as spintronics, is the promising technology to replace the charge current based technology. Spintronics based devices allow miniaturization of the device and faster response. The study of spin current efficiency in different materials is one of the emergent research topics in modern days. Spin pumping and inverse spin Hall effect (ISHE) are popular tools to study the spin to charge current conversion efficiency in the materials. In last one decade, ISHE and spin pumping are heavily investigated in ferromagnet (FM)/ heavy metal (HM) heterostructures. Recently the antiferromagnetic (AFM) materials are found to be a good replacement of heavy metals (HM) for these kind of studies. Faster dynamics, exhibiting very high spin-orbit coupling, absence of stray field, efficient propagation of spin current make AFM to be a good replacement of HMs. Understanding the role of different FM layers in a FM/AFM heterostructure for ISHE or spin pumping study is very important for spin to charge conversion physics. In this context we have performed the ISHE in CoFeB/ IrMn heterostructures. Spin pumping study is carried out for Co60F e20B20(12nm)/Cu(3nm)/Ir50M n50(tnm)/AlOx(3nm) samples where t value varies from 0 to 10 nm. The Cu(3 nm) buffer layer is used which is less than the spin diffusion length(∼8 nm) of Cu to improve the IrMn growth. The 3 nm Cu layer allows the unperturbed spin current propagation in the heterostructures. Damping of all the samples is higher than the single layer CoFeB which indicates that the spin pumping is due to the presence of IrMn. Further the spin pumping in the samples are confirmed by ISHE measurement. The real part of spin mixing conductance (g ↑↓ r ) = 0.704 ± 0.01 × 10 18 m −2 is found to be maximum in IrMn(2 nm) sample from the ISHE analysis. The large Spin Hall angle was also found to be ∼ 0.30 for all the samples.

show abstract

Influence of the thickness of an antiferromagnetic IrMn layer on the static and dynamic magnetization of weakly coupled CoFeB/IrMn/CoFeB trilayers

Cited by 4 publications

References 61 publications

Influence of atomic roughness at the uncompensated Fe/CoO(111) interface on the exchange-bias effect

Influence of atomic roughness at the uncompensated Fe/CoO(111) interface on the exchange-bias effect

Spin pumping and inverse spin Hall effect in CoFeB/IrMn heterostructures

Spin pumping and inverse spin Hall effect in CoFeB/IrMn heterostructures

Contact Info

Product

Resources

About